IRLS540A, IRLS610A, IRLS620A Selling Leads, Datasheet
Package Cooled:TO-220F D/C:09+
IRLS540A, IRLS610A, IRLS620A Datasheet download
Part Number: IRLS540A
MFG: --
Package Cooled: TO-220F
D/C: 09+
IRLS540A, IRLS610A, IRLS620A
- Table of contents:
Info of IRLS540A
Info of IRLS610A
Info of IRLS620A
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About IRLS540A
PDF/DataSheet Download
Datasheet: IRLS540A
File Size: 264238 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About IRL1004
PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRLS620A
PDF/DataSheet Download
Datasheet: IRLS620A
File Size: 261336 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
IRLS540A Maximum Ratings
|
Symbol |
Characteristic |
Value |
Units |
|
VDSS |
Drain-to-Source Voltage |
100 |
V |
|
ID |
Continuous Drain Current (TC=25°C) |
17 |
A |
| Continuous Drain Current (TC=100°C) |
12 | ||
|
IDM |
Drain Current-Pulsed |
98 |
A |
|
VGS |
Gate-to-Source Voltage |
±20 |
V |
|
EAS |
Single Pulsed Avalanche Energy |
385 |
mJ |
|
IAR |
Avalanche Current |
17 |
A |
|
EAR |
Repetitive Avalanche Energy |
4.4 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
6.5 |
V/ns |
|
PD |
Total Power Dissipation (TC=25°C) Linear Derating Factor |
44 0.29 |
W W/°C |
|
TJ , TSTG |
Operating Junction and Storage Temperature Range |
- 55 to +175 |
°C |
|
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds |
300 |
IRLS540A Features
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ VDS = 100V
Lower RDS(ON) : 0.046 (Typ
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ VDS = 100V
Lower RDS(ON) : 0.046 (Typ
IRLS610A Maximum Ratings
|
Symbol |
Parameter |
Value |
Units |
|
VDSS |
Drain-to-Source Voltage |
200 |
V |
|
ID |
Continuous Drain Current (TC=25 ) Continuous Drain Current (TC=100 ) |
2.5 1.6 |
A |
|
IDM |
Drain Current-Pulsed Gate-to-Source Voltage |
12 |
W/ |
|
VGS |
Gate-to-Source Voltage |
±20 |
V |
|
EAS |
Single Pulse Avalanche Energy |
20 |
mJ |
|
IAR |
Avalanche Current |
2.9 |
A |
|
EAR |
Repetitive Avalanche Energy |
1.9 |
mJ |
|
dV/dt |
Peak Diode Recovery dv/dt |
5.0 |
V/ns |
|
PD |
Total Power Dissipation (TC=25 ) Linear Derating Factor |
19 0.15 |
W |
|
TJ |
Operating Junction |
-55 to 150 |
|
|
TSTG |
Storage Temperature Range | ||
|
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8 " from case for 5-seconds |
300 |
IRLS610A Features
`Avalanche Rugged Technology
`Rugged Gate Oxide Technology
`Lower Input Capacitance
`Improved Gate Charge
`Extended Safe Operating Area
`Lower Leakage Current : 10 A (Max.) @ VDS = 200V
`Lower RDS(ON) : 1.185 (Typ.)
`Rugged Gate Oxide Technology
`Lower Input Capacitance
`Improved Gate Charge
`Extended Safe Operating Area
`Lower Leakage Current : 10 A (Max.) @ VDS = 200V
`Lower RDS(ON) : 1.185 (Typ.)
IRLS620A Maximum Ratings
|
Symbol |
Characteristic |
Value |
Units |
|
VDSS |
Drain-to-Source Voltage |
100 |
V |
|
ID |
Continuous Drain Current (TC=25°C) |
4.1 |
A |
| Continuous Drain Current (TC=100°C) |
2.5 | ||
|
IDM |
Drain Current-Pulsed |
18 |
A |
|
VGS |
Gate-to-Source Voltage |
±20 |
V |
|
EAS |
Single Pulsed Avalanche Energy |
33 |
mJ |
|
IAR |
Avalanche Current |
4.1 |
A |
|
EAR |
Repetitive Avalanche Energy |
2.6 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
5 |
V/ns |
|
PD |
Total Power Dissipation (TC=25°C) Linear Derating Factor |
26 0.21 |
W W/°C |
|
TJ , TSTG |
Operating Junction and Storage Temperature Range |
- 55 to +150 |
°C |
|
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds |
300 |
IRLS620A Features
Logic-Level Gate Drive
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ VDS = 200V
Lower RDS(ON) : 0.609 (Typ.)
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ VDS = 200V
Lower RDS(ON) : 0.609 (Typ.)
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