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IRLS630A, IRLS640A, IRLSG5653

Table of contents:
Info of IRLS630A
Info of IRLS640A
Info of IRLSG5653

IRLS630A, IRLS640A, IRLSG5653 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:N/A D/C:09+

IRLS630A, IRLS640A, IRLSG5653 Datasheet download

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Part Number: IRLS630A

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: N/A

D/C: 09+

Description: MOSFET N-CHAN 200V 9.8A TO-220F

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IRLS630A Parameters

Technical/Catalog Information	IRLS630A
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	6.5A
Rds On (Max) @ Id, Vgs	400 mOhm @ 3.25A, 5V
Input Capacitance (Ciss) @ Vds	755pF @ 25V
Power - Max	36W
Packaging	Tube
Gate Charge (Qg) @ Vgs	27nC @ 5V
Package / Case	TO-220F
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRLS630A IRLS630A

IRLS630A Maximum Ratings

Symbol	Characteristic	Value	Units
V_DSS	Drain-to-Source Voltage	100	V
I_D	Continuous Drain Current (T_C=25°C)	6.5	A
I_D	Continuous Drain Current (T_C=100°C)	4.1	A
I_DM	Drain Current-Pulsed	32	A
V_GS	Gate-to-Source Voltage	±20	V
E_AS	Single Pulsed Avalanche Energy	56	mJ
I_AR	Avalanche Current	6.5	A
E_AR	Repetitive Avalanche Energy	3.6	mJ
dv/dt	Peak Diode Recovery dv/dt	5	V/ns
P_D	Total Power Dissipation (T_C=25°C) Linear Derating Factor	36 0.29	W W/°C
T_J , T_STG	Operating Junction and Storage Temperature Range	- 55 to +150	°C
T_L	Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds	300	°C

IRLS630A Features

Logic-Level Gate Drive
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ V_DS = 200V
Lower R_DS(ON) : 0.335 (Typ.)

IRLS640A Parameters

Technical/Catalog Information	IRLS640A
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	9.8A
Rds On (Max) @ Id, Vgs	180 mOhm @ 4.9A, 5V
Input Capacitance (Ciss) @ Vds	1705pF @ 25V
Power - Max	40W
Packaging	Tube
Gate Charge (Qg) @ Vgs	56nC @ 5V
Package / Case	TO-220F
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRLS640A IRLS640A

IRLS640A Maximum Ratings

Symbol	Characteristic	Value	Units
V_DSS	Drain-to-Source Voltage	200	V
I_D	Continuous Drain Current (T_C=25°C)	9.8	A
I_D	Continuous Drain Current (T_C=100°C)	6.2	A
I_DM	Drain Current-Pulsed	63	A
V_GS	Gate-to-Source Voltage	±20	V
E_AS	Single Pulsed Avalanche Energy	64	mJ
I_AR	Avalanche Current	18	A
E_AR	Repetitive Avalanche Energy	4.0	mJ
dv/dt	Peak Diode Recovery dv/dt	5	V/ns
P_D	Total Power Dissipation (T_C=25°C) Linear Derating Factor	40 0.32	W W/°C
T_J , T_STG	Operating Junction and Storage Temperature Range	- 55 to +150	°C
T_L	Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds	300	°C

IRLS640A Features

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