IRLU014N, IRLU014PBF, IRLU024 Selling Leads, Datasheet
MFG:IR Package Cooled:TO-251 D/C:07+
IRLU014N, IRLU014PBF, IRLU024 Datasheet download
Part Number: IRLU014N
MFG: IR
Package Cooled: TO-251
D/C: 07+
IRLU014N, IRLU014PBF, IRLU024
- Table of contents:
Info of IRLU014N
Info of IRLU014PBF
Info of IRLU024
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About IRLU014N
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Datasheet: IRLU014N
File Size: 113525 KB
Manufacturer: IRF [International Rectifier]
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About IRL1004
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Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
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About IRLU024
PDF/DataSheet Download
Datasheet: IRLU024
File Size: 172563 KB
Manufacturer:
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IRLU014N General Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
IRLU014N Maximum Ratings
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 10 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 7.1 | |
| IDM | Pulsed Drain Current | 40 | |
| PD @TC = 25°C | C Power Dissipation | 28 | W |
| Linear Derating Factor | 0.2 | W/°C | |
| VGS | Gate-to-Source Voltage | ±16 | V |
| EAS | Single Pulse Avalanche Energy | 35 | mJ |
| IAR | Avalanche Current | 6.0 | A |
| EAR | Repetitive Avalanche Energy | 2.8 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | °C |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |
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