MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:TO-251 D/C:06+
IRLU024A, IRLU024N, IRLU024NPBF Datasheet download
Category: Discrete Semiconductor Products
MFG: International Rectifier
Package Cooled: TO-251
D/C: 06+
Description: MOSFET N-CH 55V 17A I-PAK
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PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRLU024N
File Size: 166099 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRLU024NPBF
File Size: 312136 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 17 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 12 | |
| IDM | Pulsed Drain Current | 72 | |
| PD @TC = 25°C | Power Dissipation | 45 | W |
| Linear Derating Factor | 0.3 | W/°C | |
| VGS | Gate-to-Source Voltage | ±16 | V |
| EAS | Single Pulse Avalanche Energy | 68 | mJ |
| IAR | Avalanche Current | 11 | A |
| EAR | Repetitive Avalanche Energy | 4.5 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | °C |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |
| Technical/Catalog Information | IRLU024NPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 17A |
| Rds On (Max) @ Id, Vgs | 65 mOhm @ 10A, 10V |
| Input Capacitance (Ciss) @ Vds | 480pF @ 25V |
| Power - Max | 45W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 15nC @ 5V |
| Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRLU024NPBF IRLU024NPBF |
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 17 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 12 | |
| IDM | Pulsed Drain Current | 72 | |
| PD @TC = 25°C | C Power Dissipation | 45 | W |
| Linear Derating Factor | 0.3 | W/°C | |
| VGS | Gate-to-Source Voltage | ±16 | V |
| EAS | Single Pulse Avalanche Energy | 68 | mJ |
| IAR | Avalanche Current | 11 | A |
| EAR | Repetitive Avalanche Energy | 4.5 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | °C |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |
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