MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:251 D/C:06+
IRLU024Z, IRLU034A, IRLU110 Datasheet download
Category: Discrete Semiconductor Products
MFG: International Rectifier
Package Cooled: 251
D/C: 06+
Description: MOSFET N-CH 55V 16A I-PAK
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Datasheet: IRLU024Z
File Size: 220845 KB
Manufacturer: IRF [International Rectifier]
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PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
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PDF/DataSheet Download
Datasheet: IRLU110
File Size: 179671 KB
Manufacturer:
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| Technical/Catalog Information | IRLU024Z |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 16A |
| Rds On (Max) @ Id, Vgs | 58 mOhm @ 9.6A, 10V |
| Input Capacitance (Ciss) @ Vds | 380pF @ 25V |
| Power - Max | 35W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 9.9nC @ 5V |
| Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRLU024Z IRLU024Z |
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
| Parameter |
Max. |
Units | |
| ID @ TA = 25°C | Continuous Drain Current, VGS @ 10V (Silicon Limited) |
16 |
A |
| ID @ TA = 100°C | Continuous Drain Current, VGS @ 10V |
11 | |
| IDM | Pulsed Drain Current |
64 | |
| PD @TA = 25°C | Power Dissipation (PCB Mount) |
35 |
|
| PD @TA = 25°C | Power Dissipation (PCB Mount) |
0.23 |
W |
| Linear Derating Factor |
0.02 |
mW/ | |
| VGS | Gate-to-Source Voltage |
± 16 |
V |
| EAS(Thermally limited) | Single Pulse Avalanche Energy |
21 |
mJ |
| EAS (Tested ) | Single Pulse Avalanche Energy Tested Value |
38 | |
| IAR | Avalanche Current |
See Fig.12a, 12b, 15, 16 |
A |
| EAR | Repetitive Avalanche Energy |
mJ | |
| TJ, TSTG | Operating Junction and Storage Temperature Range |
-55 to + 150 |
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