IRLU224, IRLU230A, IRLU2703 Selling Leads, Datasheet
MFG:IR Package Cooled:TO-251 D/C:06+
IRLU224, IRLU230A, IRLU2703 Datasheet download
Part Number: IRLU224
MFG: IR
Package Cooled: TO-251
D/C: 06+
IRLU224, IRLU230A, IRLU2703
- Table of contents:
Info of IRLU224
Info of IRLU230A
Info of IRLU2703
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About IRL1004
PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRLU230A
PDF/DataSheet Download
Datasheet: IRLU230A
File Size: 234893 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
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About IRLU2703
PDF/DataSheet Download
Datasheet: IRLU2703
File Size: 426094 KB
Manufacturer:
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IRLU230A Maximum Ratings
|
Symbol |
Characteristic |
Value |
Units |
|
VDSS |
Drain-to-Source Voltage |
200 |
V |
|
ID |
Continuous Drain Current (TC=25°C) |
7.5 |
A |
| Continuous Drain Current (TC=100°C) |
4.7 | ||
|
IDM |
Drain Current-Pulsed (1) |
26 |
A |
|
VGS |
Gate-to-Source Voltage |
±20 |
V |
|
EAS |
Single Pulsed Avalanche Energy (2) |
37 |
mJ |
|
IAR |
Avalanche Current (1) |
7.5 |
A |
|
EAR |
Repetitive Avalanche Energy (1) |
4.8 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt (2) |
5 |
V/ns |
|
PD |
Total Power Dissipation (TA=25°C)* |
2.5 |
W |
| Total Power Dissipation (TC=25°C) Linear Derating Factor |
48 0.38 |
W W/°C | |
|
TJ , TSTG |
Operating Junction and Storage Temperature Range |
- 55 to +150 |
°C |
|
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds |
300 |
IRLU230A Features
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current: 10mA (Max.) @ VDS = 200V
Lower RDS(ON): 0.335W (Typ.)
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current: 10mA (Max.) @ VDS = 200V
Lower RDS(ON): 0.335W (Typ.)
IRLU2703 General Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
IRLU2703 Maximum Ratings
|
Parameter |
Max. |
Units | |
| ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V |
23 |
A |
| ID @ TC = 100°C |
Continuous Drain Current, VGS @ 10V |
16 | |
| IDM |
Pulsed Drain Current |
96 | |
| PD @TC = 25°C |
Power Dissipation |
45 |
W |
|
Linear Derating Factor |
0.30 |
W/°C | |
| VGS |
Gate-to-Source Voltage |
± 16 |
V |
| EAS |
Single Pulse Avalanche Energy |
77 |
mJ |
| IAR |
Avalanche Current |
14 |
A |
| EAR |
Repetitive Avalanche Energy |
4.5 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt |
5.0 |
V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
°C |
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
IRLU2703 Features
· Logic-Level Gate Drive
· Ultra Low On-Resistance
· Surface Mount (IRLR2703)
· Straight Lead (IRLU2703)
· Advanced Process Technology
·Fast Switching
· Fully Avalanche Rated
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