IRLU2705, IRLU2905, IRLU2908 Selling Leads, Datasheet
MFG:IR Package Cooled:TO-251 D/C:03+
IRLU2705, IRLU2905, IRLU2908 Datasheet download
Part Number: IRLU2705
MFG: IR
Package Cooled: TO-251
D/C: 03+
IRLU2705, IRLU2905, IRLU2908
- Table of contents:
Info of IRLU2705
Info of IRLU2905
Info of IRLU2908
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About IRLU2705
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Datasheet: IRLU2705
File Size: 207076 KB
Manufacturer: IRF [International Rectifier]
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About IRLU2905
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Datasheet: IRLU2905
File Size: 426094 KB
Manufacturer:
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About IRL1004
PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
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IRLU2705 General Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
IRLU2705 Maximum Ratings
|
Parameter |
Max. |
Units | |
| ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V |
28 |
A |
| ID @ TC = 100°C |
Continuous Drain Current, VGS @ 10V |
20 | |
| IDM |
Pulsed Drain Current |
110 | |
| PD @TC = 25°C |
Power Dissipation |
68 |
W |
|
Linear Derating Factor |
0.45 |
W/°C | |
| VGS |
Gate-to-Source Voltage |
± 16 |
V |
| EAS |
Single Pulse Avalanche Energy |
110 |
mJ |
| IAR |
Avalanche Current |
16 |
A |
| EAR |
Repetitive Avalanche Energy |
6.8 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt |
5.0 |
V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
°C |
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
IRLU2705 Features
· Logic-Level Gate Drive
· Ultra Low On-Resistance
· Surface Mount (IRLR2705)
· Straight Lead (IRLU2705)
· Advanced Process Technology
· Fast Switching
· Fully Avalanche Rated
IRLU2905 General Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
IRLU2905 Maximum Ratings
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 42 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 30 | |
| IDM | Pulsed Drain Current | 160 | |
| PD @TC = 25°C | C Power Dissipation | 110 | W |
| Linear Derating Factor | 0.71 | W/°C | |
| VGS | Gate-to-Source Voltage | ±16 | V |
| EAS | Single Pulse Avalanche Energy | 210 | mJ |
| IAR | Avalanche Current | 25 | A |
| EAR | Repetitive Avalanche Energy | 11 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | °C |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |
IRLU2908 General Description
Specifically designed for Automotive applications, this HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175 junction operating temperature, low RJC, fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.\
The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
IRLU2908 Maximum Ratings
| Parameter |
Max. |
Units | |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V (Silicon Limited) |
39 |
A |
| ID @ TC = 100 | Continuous Drain Current, VGS @ 10V (See Fig. 9) |
28 | |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V (Package Limited) |
30 | |
| IDM | Pulsed Drain Current |
150 | |
| PD @TC = 25 | Gate-to-Emitter Voltage |
120 |
W |
|
0.77 |
W/ | ||
| VGS | Gate-to-Source Voltage |
± 16 |
V |
| EAS | Single Pulse Avalanche Energy (Thermally Limited) |
180 |
mJ |
| EAS (tested) | Single Pulse Avalanche Energy Tested Value |
250 | |
| IAR | Avalanche Current |
See Fig.12a,12b,15,16 |
A |
| EAR | Repetitive Avalanche Energy |
mJ | |
| dv/dt | Peak Diode Recovery dv/dt |
2.3 |
V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
|
| Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
IRLU2908 Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175 Operating Temperature
l Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Ultra Low On-Resistance
Dynamic dv/dt Rating
175 Operating Temperature
l Fast Switching
Repetitive Avalanche Allowed up to Tjmax
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