MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:TO-251 D/C:new
IRLU2905PBF, IRLU2905Z, IRLU3103 Datasheet download
Category: Discrete Semiconductor Products
MFG: International Rectifier
Package Cooled: TO-251
D/C: new
Description: MOSFET N-CH 55V 42A/28A I-PAK
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PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRLU2905Z
File Size: 222809 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRLU3103
File Size: 168713 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
| Technical/Catalog Information | IRLU2905PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 42A |
| Rds On (Max) @ Id, Vgs | 27 mOhm @ 25A, 10V |
| Input Capacitance (Ciss) @ Vds | 1700pF @ 25V |
| Power - Max | 110W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 48nC @ 5V |
| Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRLU2905PBF IRLU2905PBF |
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
| Parameter |
Max. |
Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @10V (Silicon Limited) |
60 |
|
| ID @ TC = 100°C | Continuous Drain Current, VGS @10V |
43 |
A |
| ID @ TC = 25°C | Continuous Drain Current, VGS @10V (Silicon Limited) |
42 |
|
| IDM | Pulsed Drain Current |
240 |
|
| PD @TC = 25°C | Power Dissipation |
110 |
W |
| Linear Derating Factor |
0.72 |
W/°C | |
| VGS | Gate-to-Source Voltage |
±16 |
V |
| EAS(Thermally limited) | Single Pulse Avalanche Energy |
57 |
mJ |
| EAS (Tested ) | Single Pulse Avalanche Energy Tested Value |
85 |
|
| IAR | Avalanche Current |
See Fig.12a, 12b, 15, 16 |
A |
| EAR | Repetitive Avalanche Energy |
mJ | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
°C |
| Soldering Temperature, for 10 seconds |
300 (1.6mm from case) |
||
| Mounting torque, 6-32 or M3 screw. |
10 lbf•in (1.1N•m) |
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 46 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 29 | A |
| IDM | Pulsed Drain Current | 220 | A |
| PD @TC = 25°C | Power Dissipation | 69 | W |
| Linear Derating Factor | 0.56 | W/°C | |
| VGS | Gate-to-Source Voltage | ±16 | V |
| EAS | Single Pulse Avalanche Energy | 240 | mJ |
| IAR | Avalanche Current | 34 | A |
| EAR | Repetitive Avalanche Energy | 6.9 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 2.0 | V/ns |
| TJ,TSTG | Operating Junction and Storage Temperature Range | -55 to + 150 | °C |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case) | °C |
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