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Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
IRLU3103PBF Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25
Continuous Drain Current, VGS @ 10V
55
A
ID @ TC = 100
Continuous Drain Current, VGS @ 10V
39
IDM
Pulsed Drain Current
220
PD @TC = 25
Power Dissipation
107
W
Linear Derating Factor
0.71
W/
VGS
Gate-to-Source Voltage
± 16
V
EAS
Single Pulse Avalanche Energy
240
mJ
IAR
Avalanche Current
34
A
EAR
Repetitive Avalanche Energy
11
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
TJ,TSTG
Operating Junction and Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
IRLU3103PBF Features
· Logic-Level Gate Drive · Ultra Low On-Resistance · Surface Mount (IRLR3103) · Straight Lead (IRLU3103) · Advanced Process Technology · Fast Switching · Fully Avalanche Rated · Lead-Free
IRLU3110ZPBF Parameters
Technical/Catalog Information
IRLU3110ZPBF
Vendor
International Rectifier
Category
Discrete Semiconductor Products
Mounting Type
Through Hole
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25° C
42A
Rds On (Max) @ Id, Vgs
14 mOhm @ 38A, 10V
Input Capacitance (Ciss) @ Vds
3980pF @ 25V
Power - Max
140W
Packaging
Tube
Gate Charge (Qg) @ Vgs
48nC @ 4.5V
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature
Logic Level Gate
Drawing Number
*
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
IRLU3110ZPBF IRLU3110ZPBF
IRLU3110ZPBF General Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
