MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:TO-251 D/C:new
IRLU3105, IRLU3303, IRLU3410 Datasheet download
Category: Discrete Semiconductor Products
MFG: International Rectifier
Package Cooled: TO-251
D/C: new
Description: MOSFET N-CH 100V 17A I-PAK
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PDF/DataSheet Download
Datasheet: IRLU3105
File Size: 173179 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRLU3303
File Size: 145816 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRLU3410
File Size: 162427 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
| Technical/Catalog Information | IRLU3410 |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 17A |
| Rds On (Max) @ Id, Vgs | 105 mOhm @ 10A, 10V |
| Input Capacitance (Ciss) @ Vds | 800pF @ 25V |
| Power - Max | 79W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 34nC @ 5V |
| Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRLU3410 IRLU3410 |
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 17 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 12 | |
| IDM | Pulsed Drain Current | 60 | |
| PD @TC = 25°C | C Power Dissipation | 79 | W |
| Linear Derating Factor | 0.53 | W/°C | |
| VGS | Gate-to-Source Voltage | ±16 | V |
| EAS | Single Pulse Avalanche Energy | 150 | mJ |
| IAR | Avalanche Current | 9.0 | A |
| EAR | Repetitive Avalanche Energy | 7.9 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | °C |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |
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