IRLZ14, IRLZ14A, IRLZ14L Selling Leads, Datasheet
MFG:IR Package Cooled:TO-220 D/C:09+
IRLZ14, IRLZ14A, IRLZ14L Datasheet download
Part Number: IRLZ14
MFG: IR
Package Cooled: TO-220
D/C: 09+
IRLZ14, IRLZ14A, IRLZ14L
- Table of contents:
Info of IRLZ14
Info of IRLZ14A
Info of IRLZ14L
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About IRLZ14
PDF/DataSheet Download
Datasheet: IRLZ14
File Size: 298759 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRL1004
PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRLZ14L
PDF/DataSheet Download
Datasheet: IRLZ14L
File Size: 298759 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
IRLZ14L General Description
Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRLZ14L) is available for lowprofile applications.
IRLZ14L Maximum Ratings
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 10 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 7.2 | A |
| IDM | Pulsed Drain Current | 40 | A |
| PD @TA = 25°C | Power Dissipation | 3.7 | A |
| PD @TC = 25°C | Power Dissipation | 43 | W |
| Linear Derating Factor | 0.29 | W/°C | |
| VGS | Gate-to-Source Voltage | ±10 | V |
| EAS | Single Pulse Avalanche Energy | 68 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 4.5 | V/ns |
| TJ,TSTG | Operating Junction and Storage Temperature Range | -55 to + 175 | °C |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case) | °C |
IRLZ14L Features
· Advanced Process Technology
· Surface Mount (IRLZ14S)
· Low-profile through-hole (IRLZ14L)
· 175°C Operating Temperature
· Fast Switching
· Surface Mount (IRLZ14S)
· Low-profile through-hole (IRLZ14L)
· 175°C Operating Temperature
· Fast Switching
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