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VGE= 15 V, TVJ = 125, RG = 47 VCE = 0.8•VCES Clamped inductive load, L = 100 H
I = 18
A
PC
TC = 25
150
W
TJ
-55 ... +150
TJM
150
Tstg
-55 ... +150
TL
1.6 mm (0.063 in) from case for 10 s
300
Md
Mounting torque
1.15/10
Nm/lb.in.
Weight
6
g
IXBH15N140 Features
• International standard package JEDEC TO-247 AD • High Voltage BIMOSFETTM - replaces high voltage Darlingtons and series connected MOSFETs - lower effective RDS(on) • Monolithic construction - high blocking voltage capability - very fast turn-off characteristics • MOS Gate turn-on - drive simplicity • Reverse conducting capability
IXBH15N140 Typical Application
• Flyback converters • DC choppers • Uninterruptible power supplies (UPS) • Switched-mode and resonant-mode power supplies • CRT deflection • Lamp ballasts
IXBH15N160 Maximum Ratings
Symbol
Conditions
Maximum
Ratings
15N140
15N160
VCES
TJ = 25 to 150
1400
1600
v
VCGR
TJ = 25 to 150; RGE = 1
1400
1600
v
VGES
Continuous
±20
V
±30
V
IC25
TC = 25,
15
A
IC90
TC = 90
9
A
ICM
TC = 25°C, 1 ms
18
A
SSOA (RBSOA)
VGE= 15 V, TVJ = 125, RG = 47 VCE = 0.8•VCES Clamped inductive load, L = 100 H
I = 18
A
PC
TC = 25
150
W
TJ
-55 ... +150
TJM
150
Tstg
-55 ... +150
TL
1.6 mm (0.063 in) from case for 10 s
300
Md
Mounting torque
1.15/10
Nm/lb.in.
Weight
6
g
IXBH15N160 Features
• International standard package JEDEC TO-247 AD • High Voltage BIMOSFETTM - replaces high voltage Darlingtons and series connected MOSFETs - lower effective RDS(on) • Monolithic construction - high blocking voltage capability - very fast turn-off characteristics • MOS Gate turn-on - drive simplicity • Reverse conducting capability
IXBH15N160 Typical Application
• Flyback converters • DC choppers • Uninterruptible power supplies (UPS) • Switched-mode and resonant-mode power supplies • CRT deflection • Lamp ballasts