IXBF40N160

Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Gate Emitter Voltage : 20 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Collector- Emitter Voltage VCEO Max : 1600 V
Package / Case : ISOPLUS i4-PAC-3
Collector-Emitter Saturation Voltage : 6.2 V


Features:

• High Voltage BIMOSFETTM
- substitute for high voltage MOSFETs with significantly lower voltage drop
- fast switching for high frequency operation
- reverse conduction capability
• ISOPLUS i4-PAC^TM high voltage package
- isolated back surface
- enlarged creepage towards heatsink
- enlarged creepage between high voltage pins
- application friendly pinout
- high reliability
- industry standard outline


Application

• switched mode power supplies
• DC-DC converters
• resonant converters
• lamp ballasts
• laser generators, x ray generators


Specifications

Symbol	Conditions	Maximum Ratings
VCES	TVJ = 25 to 150     IXBF 40N140                                    IXBF 40N160	1400 1600	V V
VGES		±20	V
IC25 IC90	TC = 25 TC= 90	28 16	A A
ICM	VGE = 15/0 V; RG = 22 ; TVJ = 125 RBSOA, Clamped inductive load; L = 100 H	40	A
VCEK		0.8VCES
Ptot	TC = 25	250	W

Parameters:

Technical/Catalog Information	IXBF40N160
Vendor	IXYS
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	1600V
Current - Collector (Ic) (Max)	28A
Vce(on) (Max) @ Vge, Ic	7.1V @ 15V, 20A
Power - Max	250W
Mounting Type	Through Hole
Package / Case	ISOPLUS i4-PAC?
Packaging	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXBF40N160 IXBF40N160