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IXBF9N160

Features: • High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - fast switching for high frequency operation- reverse conduction capability• ISOPLUS i4-PACTM high voltage package - isolated back surface - enlarged creepage towards heatsi...

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SeekIC No. : 004381493 Detail

IXBF9N160: Features: • High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - fast switching for high frequency operation- reverse conduction capabilityR...

IXBF9N160 Data Sheet

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Part Number:
IXBF9N160
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

• High Voltage BIMOSFETTM
  - substitute for high voltage MOSFETs with significantly lower voltage drop
  - fast switching for high frequency operation
  - reverse conduction capability
• ISOPLUS i4-PACTM high voltage package
  - isolated back surface
  - enlarged creepage towards heatsink
  - enlarged creepage between high voltage pins
  - application friendly pinout
  - high reliability
  - industry standard outline


Application

• switched mode power supplies
• DC-DC converters
• resonant converters
• lamp ballasts
• laser generators, x ray generators


Specifications

Symbol Conditions   Maximum Ratings
VCES TVJ = 25°C to 150°C IXBF 9N140 1400 V
    IXBF 9N160 1600 V
VGES     ±20 V
IC25 TC = 25°C   7 A
IC90 TC = 90°C   4 A
ICM VGE = 15/0 V; RG = 100; TVJ = 125°C   12 A
VCEK RBSOA, Clamped inductive load; L = 100 µH   0.8VCES A
Ptot TC = 25°C   70 W



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