Position: Home > DataSheet > Index I > IXF Series > IXFC60N20, IXFC80N10, IXFE180N10

Low Cost Custom Prototype PCB Manufacturer

IXFC60N20, IXFC80N10, IXFE180N10

Table of contents:
Info of IXFC60N20
Info of IXFC80N10
Info of IXFE180N10

IXFC60N20, IXFC80N10, IXFE180N10 Selling Leads, Datasheet

MFG:IXYS Category:Discrete Semiconductor Products

IXFC60N20, IXFC80N10, IXFE180N10 Picture

IXFC60N20, IXFC80N10, IXFE180N10 Datasheet download

Five Points

Part Number: IXFC60N20

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled:

D/C:

Description: MOSFET N-CH 100V 176A ISOPLUS227

Price Break

Unit Price

6.17000

Extended Price

308.50

(All prices are in USD) Prices for reference only

Attentive hint

Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.

How to buy ?

How long will receive a response.

Top Sellers:

TOP

IXFC60N20 Parameters

Technical/Catalog Information	IXFC60N20
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	60A
Rds On (Max) @ Id, Vgs	33 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds	5200pF @ 25V
Power - Max	230W
Packaging	Tube
Gate Charge (Qg) @ Vgs	155nC @ 10V
Package / Case	ISOPLUS220?
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFC60N20 IXFC60N20

IXFC60N20 Maximum Ratings

Symbol	Test Conditions	Maximum	Ratings
V_DSSV_DGR	T_J= 25 to 150 T_J= 25 to 150; R_GS= 1 MΩ	200 200	V V
V_GSV_GSM	Continuous Transient	±20 ±20	V V
I_D25I_DMI_AR	T_C= 25 T_C = 25, pulse width limited by TJM T_C= 25	60 240 60	A A A
E_AR E_AS	T_C = 25 T_C= 25	30 1.0	mJ J
dv/dt	I_S I_DM, di/dt 100 A/µs, V_DD V_DSS, T_J 150, R_G = 2 Ω	5	V/ns
P_D	T_C = 25	230	W
T_J T_JMT_stg		-55 ... +150 150 -55 ... +150
T_L	1.6 mm (0.062 in.) from case for 10 s	300
Weight		3	g

IXFC60N20 Features

·Silicon chip on Direct-Copper-Bond substrate
   - High power dissipation
   - Isolated mounting surface
   - 2500V electrical isolation
· Low drain to tab capacitance(<35pF)
· Low RDS (on)
· Rugged polysilicon gate cell structure
· Unclamped Inductive Switching (UIS) rated
· Fast intrinsic Rectifier

IXFC60N20 Typical Application

· Battery chargers
· Switched-mode and resonant-mode power supplies
· DC choppers
· AC motor control

IXFC80N10 Parameters

Technical/Catalog Information	IXFC80N10
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	80A
Rds On (Max) @ Id, Vgs	12.5 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds	4800pF @ 25V
Power - Max	230W
Packaging	Tube
Gate Charge (Qg) @ Vgs	180nC @ 10V
Package / Case	ISOPLUS220?
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFC80N10 IXFC80N10

IXFC80N10 Maximum Ratings

Symbol	Conditions	Maximum	Ratings
V_CES	T_J= 25 to 150	100	v
V_CGR	T_J = 25 to 150; R_GE = 1K	100	v
V_GES	Continuous	±20	V
V_GEM	Transient	±30	V
I_C25	T_C = 25,	60	A
I_C90	T_C = 90	35	A
I_CM	T_C = 90°C,tp= 1 ms	70	A
RBSOA	V_GE= 15 V, T_VJ = 125, R_G = 10 Clamped inductive load, L = 30 H	I_CM =110 V_CEK < V_CES	A
T_SC (SCSOA)	V_GE = 15 V, V_CES = 1200V, T_J = 125°C R_G = 10 Ω non repetitive	10	µs
P_C	T_C= 25IGBT Diode	250 80	W W
T_J		-55 ... +150
T_JM		-55 ... +150
	Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s	300
M_d	Mounting torque TO-220 TO-247	0.4 - 0.6 0.8 - 1.2	Nm Nm
Weight	TO-247	6	g

IXFC80N10 Features

IXFC80N10 Typical Application

·DC-DC converters
·Battery chargers
·Switched-mode and resonant-mode power supplies
·DC choppers
·AC motor control

IXFE180N10 Parameters

Technical/Catalog Information	IXFE180N10
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	176A
Rds On (Max) @ Id, Vgs	8 mOhm @ 90A, 10V
Input Capacitance (Ciss) @ Vds	9100pF @ 25V
Power - Max	500W
Packaging	Tube
Gate Charge (Qg) @ Vgs	360nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFE180N10 IXFE180N10

IXFE180N10 Maximum Ratings

Symbol	Test Conditions	Maximum	Ratings
V_CES V_CGR	T_J= 25to 150 T_J= 25 to 150; R_GE = 1 M	100 100	V V
V_GESV_GEM	Continuous Transient	±30 ±40	V V
I_C25 I_L(RMS)I_DM I_AR	T_C= 25 Terminal (current limit) T_C= 25 Note 1 T_C= 25	178 100 750 180	A A A A
E_AR E_AS	T_C = 25 T_C= 25	60 3	mJ J
dv/dt	I I_DM, di/dt 100 A/s, V V_DSS, T_J 150, R_G=2	10	V/ns
P_D	T_C = 25	500	W
T_JT_JMT_stg		-55 ... +150 150 -55 ... +150
T_L	1.6 mm (0.062 in.) from case for 10 s	300
V_ISOL	50/60 Hz, RMS, 1 minute I_ISOL< 1 mA, 10 seconds	2500 3000	V~ V~
M_d	Mounting torque Terminal connection torque	1.5/13 1.5/13	Nm/lb.in. Nm/lb.in.
Weight		19	g

IXFE180N10 Features

•Conforms to SOT-227B outline
•Encapsulating epoxy meets UL 94 V-0, flammability classification
•Low RDS (on) HDMOSTM process
•Rugged polysilicon gate cell structure
•Unclamped Inductive Switching (UIS) rated
•Low package inductance
•Fast intrinsic Rectifier

IXFE180N10 Typical Application

• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• Temperature and lighting controls
• Low voltage relays

Hotspot Suppliers Product

Product List A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 0 1 2 3 4 5 6 7 8 9

MT58L64L18CT-10

Price: 4-6 USD

MT58L64L18CT-10 TQFP100
DL-7140-211M

Price: 5-6.5 USD

DL-7140-211M laser tube
74LVC74APG

Price: 4-5 USD

74LVC74APG - IC FLIP FLOP D-Type POS-EDG DUAL 14TSSOP
CY28346ZI-2

Price: 6.5-8 USD

CYPRESS - Clock Synthesizer with Differential CPU Outputs
PI5V330QEX

Price: 0.284-0.286 USD

PI5V330QEX Pericom Multiplexer Switch ICs
BSM300GA120DN2

Price: 1-2 USD

IGBT power module, Single switch, 1200 V, Collector-emitter voltage, 430A
SVA150XG04TB

Price: 1-2 USD

a-Si TFT-LCD, NEC, 228.096Hmm, 560V
PC354N1

Price: 0.124-0.2 USD

PC354N1T - Mini-flat Package, AC Input Type Photocoupler - Sharp Electrionic Components
RL1210JR-070R22L

Price: 0.177-0.178 USD

RL1210JR51-XX-BL - Thick Film Chip Resistor Low Ohmic - TAITRON Components Incorporated
STPS140A

Price: 0.053-0.055 USD

STPS140A - POWER SCHOTTKY RECTIFIER - STMicroelectronics
STA013

Price: 1.45-1.5 USD

STA013 - MPEG 2.5 LAYER III AUDIO DECODER - STMicroelectronics
SMBJ5347B

Price: 0.073-0.075 USD

SMBJ5347B - 5 Watt Surface Mount Silicon Zener Diodes - Micro Commercial Components