MFG:IXYS Category:Discrete Semiconductor Products Package Cooled:TO-247 D/C:08+/09+
IXFH14N80P, IXFH150, IXFH150N15P Datasheet download
Category: Discrete Semiconductor Products
MFG: IXYS
Package Cooled: TO-247
D/C: 08+/09+
Description: MOSFET N-CH 150V 150A TO-247
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PDF/DataSheet Download
Datasheet: IXFB38N100Q2
File Size: 157581 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IXFH150
File Size: 302358 KB
Manufacturer: IXYS [IXYS Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IXFB38N100Q2
File Size: 157581 KB
Manufacturer:
Download : Click here to Download
| Technical/Catalog Information | IXFH14N80P |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25° C | 14A |
| Rds On (Max) @ Id, Vgs | 720 mOhm @ 500mA, 10V |
| Input Capacitance (Ciss) @ Vds | 3900pF @ 25V |
| Power - Max | 400W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 61nC @ 10V |
| Package / Case | TO-247 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXFH14N80P IXFH14N80P |
| Technical/Catalog Information | IXFH150N15P |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25° C | 150A |
| Rds On (Max) @ Id, Vgs | 13 mOhm @ 500mA, 10V |
| Input Capacitance (Ciss) @ Vds | 5800pF @ 25V |
| Power - Max | 714W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 190nC @ 10V |
| Package / Case | TO-247 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXFH150N15P IXFH150N15P |
The IXFH150N15P is designed as PolarHT hiperFET power MOSFET of N channel enhancement mode of which advantages include easy to mount, space savings and high power density.
It has three features. The first one is that it would have international standard packages. The next one is it would be unclamped inductive switching (UIS) rated. The next one is that it would have low package inductance which would means it is easy to drive and to protect. That are all the main features.
Some absolute maximum ratings have been concluded into several points as follow. The first one is about its Vdss which would be 150V with condition of Tj = 25°C to 175°C. The second one is about its Vdgr which would be 150V with condition of Tj = 25°C to 175°C and Rgs = 1 M. The next one is about its Vgs continuous which would be +/- 20V. The next one is about its Vgsm transient which would be +/- 30V. The next one is about its Id25 which would be 150A with condition of Tc = 25°C. The next one is about its Id(rms) which would be 75A with condition of external lead current limit. The next one is about its Idm which would be 340A with condition of Tc = 25°C, pulse width limited by Tjm. The next one is about its Iar which would be 60A with condition of Tc = 25°C. The next one is about its Ear which would be 80mJ with condition of Tc = 25°C. The next one is about its Eas which would be 2.5J with condition of Tc = 25°C. The next one is about its Pd which would be 714W with condition of Tc = 25°C. The next one is about its Tj which would be from -55°C to +175°C. The next one is about its Tjm which would be 175°C. The next one is about its Tstg which would be from -55°C to +175°C. The next one is about its Tl which would be 300°C with condition of 1.6 mm (0.062 in.) from case for 10s. And so on. for more information please contact us.
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