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IXFH69N30P, IXFH6N100, IXFH6N100F

Table of contents:
Info of IXFH69N30P
Info of IXFH6N100
Info of IXFH6N100F

IXFH69N30P, IXFH6N100, IXFH6N100F Selling Leads, Datasheet

MFG:IXYS Category:Discrete Semiconductor Products Package Cooled:TO-247 D/C:`07+(pb-free)

IXFH69N30P, IXFH6N100, IXFH6N100F Datasheet download

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Part Number: IXFH6N100

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: TO-247

D/C: `07+(pb-free)

Description: MOSFET N-CH 1KV 6A TO-247AD

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IXFH69N30P Parameters

Technical/Catalog Information	IXFH69N30P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	300V
Current - Continuous Drain (Id) @ 25° C	69A
Rds On (Max) @ Id, Vgs	49 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	4960pF @ 25V
Power - Max	500W
Packaging	Tube
Gate Charge (Qg) @ Vgs	180nC @ 10V
Package / Case	TO-247
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFH69N30P IXFH69N30P

IXFH6N100 Parameters

Technical/Catalog Information	IXFH6N100
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	6A
Rds On (Max) @ Id, Vgs	2 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	2600pF @ 25V
Power - Max	180W
Packaging	Tube
Gate Charge (Qg) @ Vgs	130nC @ 10V
Package / Case	TO-247AD
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFH6N100 IXFH6N100

IXFH6N100 Maximum Ratings

Symbol	Test Conditions	Maximum	Ratings
V_DSS V_DGR	T_J = 25°C to 150°C T_J = 25°C to 150°C; R_GS = 1 M	900 1000	V V
V_GS V_GSM	Continuous Transient	±20 ±30	V V
I_D25 I_DM I_AR	T_C = 25°C T_C= 25°C, pulse width limited by T_JM T_C= 25°C	6 24 6	A A A
E_AR	T_C = 25°C	18	mJ
dv/dt	I_S IDM, di/dt 100 A/s, V_DD V_DSS, T_J 150°C, R_G = 2	5	V/ns
P_D	T_C= 25°C	180	W
T_J T_JM T_stg		-55 ... +150 150 Tstg -55 ... +150	°C °C °C
T_L	1.6 mm (0.062 in.) from case for 10 s	300	°C
M_d	Mounting torque	1.13/10	Nm/lb.in.
Weight		TO-204 = 18 g, TO-247 = 6 g

IXFH6N100 Features

• International standard packages
• Low R_{DS (on)} HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance - easy to drive and to protect
• Fast intrinsic Rectifier

IXFH6N100 Typical Application

• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays

IXFH6N100F Maximum Ratings

Symbol	Test Conditions	Maximum Ratings
V_DSS	T_J= 25°C to 150°C	1000	V
V_DGR	T_J= 25°C to 150°C; R_GS = 1 M	1000	V
V_GS	Continuous	±20	V
V_GSM	Transient	±30	V
I_D25	T_C = 25°C	6	A
I_DM	T_C = 25°C, pulse width limited by TJM	24	A
I_AR	T_C = 25°C	6	A
E_AR	T_C= 25°C	20	mJ
E_AS	T_C = 25°C	500	mJ
dv/dt	I_S I_DM, di/dt 100 A/s, V_DD V_DSS T_J 150°C, R_G = 2	15	V/ns
P_D	T_C = 25°C	180	W
T_J		-55to+150	°C
T_JM		150	°C
T_stg		-55to+150	°C
T_L	1.6 mm (0.063 in.) from case for 10 s	300	°C
M_d	Mounting torque TO-247	1.13/10 Nm/lb.in.
Weight	TO-247 TO-268	6 4	g g

IXFH6N100F Features

RF capable MOSFETs
Double metal process for low gate resistance
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS) rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier

IXFH6N100F Typical Application

DC-DC converters
Switched-mode and resonant-mode power supplies, >500kHz switching
DC choppers
13.5 MHz industrial applications
Pulse generation
Laser drivers
RF amplifiers

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