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• Low profile, high power package • Long creep and strike distances • Easy up-grade path for TO-220 designs • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic Rectifier
IXFJ13N50 Typical Application
• DC-DC converters • Synchronous rectification • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC motor control • Temperature and lighting controls • Low voltage relays
• Low profile, high power package • Long creep and strike distances • Easy up-grade path for TO-220 designs • Low RDS(on) low Qg process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic Rectifier
IXFJ32N50Q Typical Application
• DC-DC converters • Synchronous rectification • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC motor control • Temperature and lighting controls • Low voltage relays
