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IXFK20N120, IXFK21N100F, IXFK21N100Q

Table of contents:
Info of IXFK20N120
Info of IXFK21N100F
Info of IXFK21N100Q

IXFK20N120, IXFK21N100F, IXFK21N100Q Selling Leads, Datasheet

MFG:IXYS Category:Discrete Semiconductor Products Package Cooled:IXYS D/C:900

IXFK20N120, IXFK21N100F, IXFK21N100Q Picture

IXFK20N120, IXFK21N100F, IXFK21N100Q Datasheet download

Five Points

Part Number: IXFK20N120

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: IXYS

D/C: 900

Description: MOSFET N-CH 1000V 21A TO-264

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IXFK20N120 Parameters

Technical/Catalog Information	IXFK20N120
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25° C	20A
Rds On (Max) @ Id, Vgs	750 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	7400pF @ 25V
Power - Max	780W
Packaging	Tube
Gate Charge (Qg) @ Vgs	160nC @ 10V
Package / Case	TO-264AA
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFK20N120 IXFK20N120

IXFK21N100F Maximum Ratings

Symbol	Test Conditions	Maximum Ratings
V_DSS V_DGR	T_J = 25°C to 150°C T_J = 25°C to 150°C; R_GS= 1 M	1000 1000	V V
V_GS V_GSM	Continuous Transient	±20 ±30	V V
I_D25 I_DM I_AR	T_C = 25°C T_C= 25°C, pulse width limited by T_JM T_C = 25°C	21 84 21	A A A
E_AR E_AS	T_C = 25°C T_C = 25°C	60 2.5	mJ J
dv/dt	I_S I_DM, di/dt 100 A/µs, V_DD V_DSS, T_J 150°C, R_G = 2	10	V/ns
P_D	T_C = 25°C	500	W
T_J T_JM T_stg		-55 ... +150 150 -55 ... +150	°C °C °C
T_L	1.6 mm (0.063 in.) from case for 10 s	300	°C
M_d	Mounting torque TO-264	0.4/6	Nm/lb.in.
Weight	PLUS 247 TO-264	5 10	g g

IXFK21N100F Features

RF capable MOSFETs
Double metal process for low gate resistance
Unclamped Inductive Switching (UIS) rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier

IXFK21N100F Typical Application

DC-DC converters
Switched-mode and resonant-mode power supplies, >500kHz switching
DC choppers
13.5 MHz industrial applications
Pulse generation
Laser drivers
RF amplifiers

IXFK21N100Q Parameters

Technical/Catalog Information	IXFK21N100Q
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	21A
Rds On (Max) @ Id, Vgs	500 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	6900pF @ 25V
Power - Max	500W
Packaging	Tube
Gate Charge (Qg) @ Vgs	170nC @ 10V
Package / Case	TO-264AA
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFK21N100Q IXFK21N100Q

IXFK21N100Q Features

• IXYS advanced low Q_g process
• Low gate charge and capacitances
- easier to drive
- faster switching
• International standard packages
• Low R_{DS (on)}
• Rated for unclamped Inductive load switching (UIS) rated
• Molding epoxies meet UL 94 V-0 flammability classification

IXFK21N100Q Typical Application

• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls

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