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International standard packages Low RDS(on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic rectifier
IXFK90N30 Typical Application
DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls
IXFL100N50P Parameters
Technical/Catalog Information
IXFL100N50P
Vendor
IXYS
Category
Discrete Semiconductor Products
Mounting Type
Through Hole
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
500V
Current - Continuous Drain (Id) @ 25° C
70A
Rds On (Max) @ Id, Vgs
52 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds
20000pF @ 25V
Power - Max
625W
Packaging
Tube
Gate Charge (Qg) @ Vgs
240nC @ 10V
Package / Case
ISOPLUS264?
FET Feature
Standard
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
IXFL100N50P IXFL100N50P
IXFL34N100 Parameters
Technical/Catalog Information
IXFL34N100
Vendor
IXYS
Category
Discrete Semiconductor Products
Mounting Type
Through Hole
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
1000V (1kV)
Current - Continuous Drain (Id) @ 25° C
30A
Rds On (Max) @ Id, Vgs
280 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds
9200pF @ 25V
Power - Max
550W
Packaging
Tube
Gate Charge (Qg) @ Vgs
380nC @ 10V
Package / Case
ISOPLUS264?
FET Feature
Standard
Drawing Number
*
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
IXFL34N100 IXFL34N100
IXFL34N100 Features
·Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation ·Low drain to tab capacitance(<30pF) ·Low RDS (on) HDMOSTM process ·Rugged polysilicon gate cell structure ·Unclamped Inductive Switching (UIS) rated ·Fast intrinsic Rectifier
IXFL34N100 Typical Application
·DC-DC converters ·Battery chargers ·Switched-mode and resonant-mode power supplies ·DC choppers ·AC motor control
