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IXFM11N80, IXFM12N100, IXFM12N90

Table of contents:
Info of IXFM11N80
Info of IXFM12N100
Info of IXFM12N90

IXFM11N80, IXFM12N100, IXFM12N90 Selling Leads, Datasheet

MFG:IXYS Category:Discrete Semiconductor Products Package Cooled:IXYS

IXFM11N80, IXFM12N100, IXFM12N90 Picture

IXFM11N80, IXFM12N100, IXFM12N90 Datasheet download

Five Points

Part Number: IXFM11N80

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: IXYS

D/C:

Description: MOSFET N-CH 900V 12A TO-204AA

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IXFM11N80 Maximum Ratings

Symbol	Test Conditions	Maximum	Ratings
V_DSSV_DGR	T_J= 25°C to 150°C T_J = 25°C to 150°C.RG=1M	800 800	V V
V_GS V_GSM	Continuous Transient	±20 ±30	V V
I_D25I_DM IAR	T_C = 25°C pulse width limited by T_JM T_C = 25°C	11N80 11 13N80 13 11N80 44 13N80 52 11N80 11 13N80 13	A A A A A A
E_AR	T_C = 25°C	30	mJ
dv/dt	I_S I_DM, di/dt 100 A/s, V_DD V_DSS T_J 150°C, R_G = 2	5	V/ns
P_D	T_C= 25°C	300	W
T_J T_JM T_stg		-55 ... +150 150 -55 ... +150	°C °C °C
TL	1.6 mm (0.062 in.) from case for 10 s	300	°C
Md	Mounting torque	1.13/10	Nm/lb.in.
Weight		TO-204 = 18 g, TO-247 = 6 g	g

IXFM11N80 Features

• International standard packages
• Low R_{DS (on)} HDMOS^TM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier

IXFM11N80 Typical Application

• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays

IXFM12N100 Parameters

Technical/Catalog Information	IXFM12N100
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	12A
Rds On (Max) @ Id, Vgs	1.05 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	4000pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	155nC @ 10V
Package / Case	TO-204, TO-3
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFM12N100 IXFM12N100

IXFM12N100 Maximum Ratings

Symbol	Test Conditions	Maximum	Ratings
V_DSSV_DGR	T_J= 25°C to 150°C T_J = 25°C to 150°C.R_GS=1M	1000 1000	V V
V_GS V_GSM	Continuous Transient	±20 ±30	V V
I_D25I_DM IAR	T_C = 25°C pulse width limited by T_JM T_C = 25°C	10N100 10 12N100 12 13N100 12.5 10N100 40 12N100 48 13N100 50 10N100 10 12N100 12 13N100 12.5	A A A A A A A A A
E_AR	T_C = 25°C	30	mJ
dv/dt	I_S I_DM, di/dt 100 A/s, V_DD V_DSS T_J 150°C, R_G = 2	5	V/ns
P_D	T_C= 25°C	300	W
T_J T_JM T_stg		-55 ... +150 150 -55 ... +150	°C °C °C
TL	1.6 mm (0.062 in.) from case for 10 s	300	°C
Md	Mounting torque	1.13/10	Nm/lb.in.
Weight		TO-204 = 18 g, TO-247 = 6 g	g

IXFM12N100 Features

·International standard packages
·Low R_{DS (on)} HDMOS^TM process
·Rugged polysilicon gate cell structure
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
-easy to drive and to protect
·Fast intrinsic Rectifier

IXFM12N100 Typical Application

·DC-DC converters
·Synchronous rectification
·Battery chargers
·Switched-mode and resonant-mode power supplies
·DC choppers
·AC motor control
·Temperature and lighting controls
·Low voltage relays

IXFM12N90 Parameters

Technical/Catalog Information	IXFM12N90
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25° C	12A
Rds On (Max) @ Id, Vgs	900 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	4200pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	155nC @ 10V
Package / Case	TO-204, TO-3
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFM12N90 IXFM12N90

IXFM12N90 Maximum Ratings

Symbol	Test Conditions	Maximum	Ratings
V_DSSV_DGR	T_J= 25°C to 150°C T_J = 25°C to 150°C.RG=1M	900 900	V V
V_GS V_GSM	Continuous Transient	±20 ±30	V V
I_D25I_DM IAR	T_C = 25°C pulse width limited by TJM T_C = 25°C	10N90 10 12N90 12 13N90 13 10N90 40 12N90 48 13N90 13 10N90 10 12N90 12 13N90 13	A A A A A A A A A
E_AR	T_C = 25°C	30	mJ
dv/dt	I_S I_DM, di/dt 100 A/s, V_DD V_DSS T_J 150°C, R_G = 2	5	V/ns
P_D	T_C= 25°C	600	W
T_J T_JM T_stg		-55 ... +150 150 -55 ... +150	°C °C °C
TL	1.6 mm (0.062 in.) from case for 10 s	300	°C
M_d	Mounting torque	1.13/10	Nm/lb.in.
Weight		TO-204 = 18 g, TO-247 = 6 g	g

IXFM12N90 Features

·International standard packages
·Low R_{DS (on)} HDMOS^TM process
·Rugged polysilicon gate cell structure
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
- easy to drive and to protect
·Fast intrinsic Rectifier

IXFM12N90 Typical Application

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