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• International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic Rectifier
IXFM21N50 Typical Application
• DC-DC converters • Synchronous rectification • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC motor control • Temperature and lighting controls • Low voltage relays
IXFM24N50 Parameters
Technical/Catalog Information
IXFM24N50
Vendor
IXYS
Category
Discrete Semiconductor Products
Mounting Type
Chassis Mount
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
500V
Current - Continuous Drain (Id) @ 25° C
24A
Rds On (Max) @ Id, Vgs
230 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds
4200pF @ 25V
Power - Max
300W
Packaging
Tube
Gate Charge (Qg) @ Vgs
160nC @ 10V
Package / Case
TO-204, TO-3
FET Feature
Standard
Drawing Number
*
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
IXFM24N50 IXFM24N50
IXFM24N50 Features
• International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic Rectifier
IXFM24N50 Typical Application
• DC-DC converters • Synchronous rectification • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC motor control • Temperature and lighting controls • Low voltage relays
