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IXFN27N80Q, IXFN280N07, IXFN280N085

Table of contents:
Info of IXFN27N80Q
Info of IXFN280N07
Info of IXFN280N085

IXFN27N80Q, IXFN280N07, IXFN280N085 Selling Leads, Datasheet

MFG:IXYS Category:Discrete Semiconductor Products Package Cooled:TO- D/C:TO-

IXFN27N80Q, IXFN280N07, IXFN280N085 Picture

IXFN27N80Q, IXFN280N07, IXFN280N085 Datasheet download

Five Points

Part Number: IXFN27N80Q

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: TO-

D/C: TO-

Description: MOSFET N-CH 85V 280A SOT-227B

Price Break

Unit Price

21.89600

Extended Price

437.92

(All prices are in USD) Prices for reference only

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IXFN27N80Q Parameters

Technical/Catalog Information	IXFN27N80Q
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	27A
Rds On (Max) @ Id, Vgs	320 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	7600pF @ 25V
Power - Max	520W
Packaging	Tube
Gate Charge (Qg) @ Vgs	170nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFN27N80Q IXFN27N80Q

IXFN27N80Q Maximum Ratings

Symbol	Test Conditions	Maximum	Ratings
V_DSS V_DGR	TJ = 25 to 150 TJ = 25 to 150; RGS = 1 M	800 800	V V
V_GS V_GSM	Continuous Transient	±20 ±30	V V
I_D25 I_DM I_AR	TC = 25°C TC = 25°C, pulse width limited by TJM	27 107 27	A A A
E_AR	TC = 25	60	mJ
E_AS	TC = 25	2.5	J
d_v/d_t	IS IDM, di/dt 100 As, VDD VDSS, TJ 150, RG = 2	5	V/ns
P_D	TC = 25	520	W
T_J T_JM T_stg		-55 ... +150 150 -55 ... +150
V_ISOL	50/60 Hz, RMS t = 1 min IISOL 1 mA t = 1 s	2500 3000	V~ V~
M_d	Mounting torque Terminal connection torque	1.5/13 1.5/13	Nm/lb.in. Nm/lb.in.
Weight		30	g

IXFN27N80Q Features

• International standard package
• Epoxy meet UL 94 V-0, flammability classification
• miniBLOC with Aluminium nitride isolation
• IXYS advanced low Qg process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
• Fast intrinsic Rectifier

IXFN27N80Q Typical Application

• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• Temperature and lighting controls

IXFN280N07 Parameters

Technical/Catalog Information	IXFN280N07
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	70V
Current - Continuous Drain (Id) @ 25° C	280A
Rds On (Max) @ Id, Vgs	5 mOhm @ 120A, 10V
Input Capacitance (Ciss) @ Vds	9400pF @ 25V
Power - Max	600W
Packaging	Tube
Gate Charge (Qg) @ Vgs	420nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFN280N07 IXFN280N07

IXFN280N085 Parameters

Technical/Catalog Information	IXFN280N085
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	85V
Current - Continuous Drain (Id) @ 25° C	280A
Rds On (Max) @ Id, Vgs	4.4 mOhm @ 100A, 10V
Input Capacitance (Ciss) @ Vds	16000pF @ 25V
Power - Max	700W
Packaging	Tube
Gate Charge (Qg) @ Vgs	600nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFN280N085 IXFN280N085

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