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IXFN36N60, IXFN38N100Q2, IXFN38N80Q2

Table of contents:
Info of IXFN36N60
Info of IXFN38N100Q2
Info of IXFN38N80Q2

IXFN36N60, IXFN38N100Q2, IXFN38N80Q2 Selling Leads, Datasheet

MFG:IXYS Category:Discrete Semiconductor Products D/C:07+

IXFN36N60, IXFN38N100Q2, IXFN38N80Q2 Datasheet download

Five Points

Part Number: IXFN36N60

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled:

D/C: 07+

Description: MOSFET N-CH 800V 38A SOT-227

Price Break

1
10
50
100
500
1000

Unit Price

45.51000
37.92500
30.34000
22.60000
20.47950
18.96007

Extended Price

45.51
379.25
1517.00
2260.00
10239.75
18960.07

(All prices are in USD) Prices for reference only

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IXFN36N60 Parameters

Technical/Catalog Information	IXFN36N60
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	36A
Rds On (Max) @ Id, Vgs	180 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	9000pF @ 25V
Power - Max	520W
Packaging	Tube
Gate Charge (Qg) @ Vgs	325nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFN36N60 IXFN36N60

IXFN36N60 Maximum Ratings

Symbol	Test Conditions	IXFK 170N10	IXFN 170N10	Ratings
V_DSSV_DGR	T_J= 25°C to 150°C T_J = 25°C to 150°C	600 600	600 600	V V
V_GS V_GSM	Continuous Transient	±20 ±30	±20 ±30	V V
I_D25I_DM IAR	T_C = 25°C, Chip capability T_C = 25°C, pulse width limited by TJM T_C= 25°C	32N60 32 36N60 36 32N60 128 36N60 144 20	32 36 128 144 20	A A A A A
E_AR	T_C = 25°C	60	60	mJ
dv/dt	I_S I_DM, di/dt 100 A/s, V_DD V_DSS T_J 150°C, R_G = 2	5	5	V/ns
P_D	T_C= 25°C	500	520	W
T_J T_JM T_stg		-55 ... +150 150 -55 ... +150		°C °C °C
T_L	1.6 mm (0.062 in.) from case for 10 s	300	-	°C
V_ISOL	50/60 Hz, RMS t = 1 min I_ISOL 1 mA t = 1 s	- -	2500 3000	V~ V~
M_d	Mounting torque Terminal connection torque	0.9/6 -	1.5/13 1.5/13	Nm/lb.in. Nm/lb.in.
Weight		10	30	g

IXFN36N60 Features

· International standard packages
· JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification
· miniBLOC with Aluminium nitride isolation
· Low R_{DS (on)} HDMOS^TMprocess
· Rugged polysilicon gate cell structure
· Unclamped Inductive Switching (UIS) rated
· Low package inductance
· Fast intrinsic Rectifier

IXFN36N60 Typical Application

· DC-DC converters
· Synchronous rectification
· Battery chargers
· Switched-mode and resonant-mode power supplies
· DC choppers
· Temperature and lighting controls
· Low voltage relays

IXFN38N100Q2 Parameters

Technical/Catalog Information	IXFN38N100Q2
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	38A
Rds On (Max) @ Id, Vgs	250 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	7200pF @ 25V
Power - Max	890W
Packaging	Tube
Gate Charge (Qg) @ Vgs	250nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFN38N100Q2 IXFN38N100Q2

IXFN38N100Q2 Maximum Ratings

Symbol	Test Conditions	Maximum	Ratings
V_DSSV_DGR	T_J= 25°C to 150°C T_J = 25°C to 150°C; R_GS = 1 MΩ	1000 1000	V V
_VGSV_GSM	Continuous Transient	±30 ±40	V V
I_D25I_DMI_AR	T_C= 25°C T_C = 25°C, pulse width limited by T_JMT_C = 25°C	38 152 38	A A A
E_AR E_AS	T_C = 25°C T_C= 25°C	60 5.0	mJ J
dv/dt	I_S I_DM, di/dt 100 A/µs, V_DD V_DSS T_J 150°C, R_G = 2 Ω	20	V/ns
P_D	T_C= 25°C	890	W
T_J T_JM T_stg		-55 ... +150 150 -55 ... +150	°C °C °C
T_L	1.6 mm (0.063 in.) from case for 10 s	300	°C
M_d	Mounting torque Terminal connection torque	1.5/13 1.5/13	Nm/lb.in. Nm/lb.in.
Weight		30	g

IXFN38N100Q2 Features

·Double metal process for low gate resistance
·miniBLOC, with Aluminium nitride isolation
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
·Fast intrinsic Rectifier

IXFN38N100Q2 Typical Application

·DC-DC converters
·Switched-mode and resonant-mode power supplies
·DC choppers
·Pulse generators

IXFN38N80Q2 Parameters

Technical/Catalog Information	IXFN38N80Q2
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	38A
Rds On (Max) @ Id, Vgs	220 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	8340pF @ 25V
Power - Max	735W
Packaging	Tube
Gate Charge (Qg) @ Vgs	190nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFN38N80Q2 IXFN38N80Q2

IXFN38N80Q2 Maximum Ratings

Symbol	Test Conditions	Maximum	Ratings
V_DSSV_DGR	T_J= 25°C to 150°C T_J = 25°C to 150°C; R_GS = 1 MΩ	800 800	V V
_VGSV_GSM	Continuous Transient	±30 ±40	V V
I_D25I_DMI_AR	T_C= 25°C T_C = 25°C, pulse width limited by T_JMT_C = 25°C	38 150 38	A A A
E_AR E_AS	T_C = 25°C T_C= 25°C	75 4.0	mJ J
dv/dt	I_S I_DM, di/dt 100 A/µs, V_DD V_DSS T_J 150°C, R_G = 2 Ω	20	V/ns
P_D	T_C= 25°C	735	W
T_J T_JM T_stg		-55 ... +150 150 -55 ... +150	°C °C °C
T_L	1.6 mm (0.063 in.) from case for 10 s	300	°C
V_ISOL	50/60Hz, RMS t =1 min SOT-227B I_ISOL < 1mA t = 1s	2500 3000	V~ V~
M_d	Mounting torque TO-264 Terminal torque SOT-227B	0.9/8 1.5/13	Nm/lb.in. Nm/ib.in.
F_C	Mounting force PLUS-247	22...130/5...30	N/lb
Weight	PLUS 247 TO-264	10 30	g g

IXFN38N80Q2 Features

·Double metal process for low gate resistance
·International standard packages
·Epoxy meet UL 94 V-0, flammability
·classification
·Avalanche energy and current rated
·Fast intrinsic Rectifier
·miniBLOC package version with Aluminum Nitrate isolation

IXFN38N80Q2 Typical Application

·Easy to mount
·Space savings
·High power density

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