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• International standard package • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier
IXFN44N60 Typical Application
• DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting controls
IXFN44N80 Parameters
Technical/Catalog Information
IXFN44N80
Vendor
IXYS
Category
Discrete Semiconductor Products
Mounting Type
Chassis Mount
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
800V
Current - Continuous Drain (Id) @ 25° C
44A
Rds On (Max) @ Id, Vgs
165 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds
10000pF @ 25V
Power - Max
700W
Packaging
Tube
Gate Charge (Qg) @ Vgs
380nC @ 10V
Package / Case
SOT-227B miniBLOC
FET Feature
Standard
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
IXFN44N80 IXFN44N80
IXFN44N80 Features
· International standard packages · miniBLOC, with Aluminium nitride isolation · Low RDS (on) HDMOSTM process · Rugged polysilicon gate cell structure · Unclamped Inductive Switching (UIS) rated · Low package inductance · Fast intrinsic Rectifier
IXFN44N80 Typical Application
· DC-DC converters · Battery chargers · Switched-mode and resonant-mode power supplies · DC choppers · Temperature and lighting controls
IXFN44N80P Parameters
Technical/Catalog Information
IXFN44N80P
Vendor
IXYS
Category
Discrete Semiconductor Products
Mounting Type
Chassis Mount
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
800V
Current - Continuous Drain (Id) @ 25° C
39A
Rds On (Max) @ Id, Vgs
190 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds
12000pF @ 25V
Power - Max
694W
Packaging
Tube
Gate Charge (Qg) @ Vgs
200nC @ 10V
Package / Case
SOT-227B miniBLOC
FET Feature
Standard
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
IXFN44N80P IXFN44N80P
IXFN44N80P Maximum Ratings
Symbol
Test Conditions
Maximum
Ratings
VCES VCGR
TJ = 25to 150 TJ = 25 to 150; RGE = 1 MΩ
800 800
V V
VGES VGEM
Continuous Transient
±30 ±40
V V
IC25 IDM
TC = 25 TC = 25, pulse width limited by TJM
39 100
A A
IAR EAR EAS
TC = 25 TC = 25 TC = 25
22 80 3.4
A mJ J
dv/dt
I IDM, di/dt 100 A/s, V VDSS, TJ 150, RG = 10
10
V/ns
PD
TC = 25
694
W
TJ TJM Tstg
-55 ... +150 150 -55 ... +150
TL
1.6 mm (0.062 in.) from case for 10 s
300
VISOL
50/60 Hz, RMS, 1 minute IISOL < 1 mA, 10 seconds
2500 3000
V~ V~
Md
Mounting torque Terminal torque
1.13/10 1.13/10
Nm/lb.in. Nm/lb.in.
Weight
30
g
IXFN44N80P Features
• International standard package • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier
IXFN44N80P Typical Application
• DC-DC converters • Synchronous rectification • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting controls • Low voltage relays
