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IXFN48N50, IXFN48N50Q, IXFN48N50U2

Table of contents:
Info of IXFN48N50
Info of IXFN48N50Q
Info of IXFN48N50U2

IXFN48N50, IXFN48N50Q, IXFN48N50U2 Selling Leads, Datasheet

MFG:IXYS Category:Discrete Semiconductor Products D/C:n/a

IXFN48N50, IXFN48N50Q, IXFN48N50U2 Datasheet download

Five Points

Part Number: IXFN48N50

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled:

D/C: n/a

Description: MOSFET N-CH 500V 48A SOT-227B

Price Break

1
10
50
100
500
1000

Unit Price

36.42000
30.35000
24.28000
18.08860
16.38900
15.17500

Extended Price

36.42
303.50
1214.00
1808.86
8194.50
15175.00

(All prices are in USD) Prices for reference only

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IXFN48N50 Parameters

Technical/Catalog Information	IXFN48N50
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	48A
Rds On (Max) @ Id, Vgs	100 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	8400pF @ 25V
Power - Max	520W
Packaging	Tube
Gate Charge (Qg) @ Vgs	270nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFN48N50 IXFN48N50

IXFN48N50 General Description

IXFN48N50 is a kind of N-channel enhancement mode.

There is some information about the maximum ratings. The VDSS is 500 V at TJ=25 to 150. The VDDR is 500 V at TJ=25 to 150, RGS=1 M. The continuous VGS is ±20 V. The transient VGSM is ±30 V. The ID25 is 44 A at TC=25. The IDM is 176 A at TC=25, pulse width limited by TJM. The IAR is 24 A at TC=25. The EAR is 30 mJ at TC=25. The PD is 520 W at TC=25. The TJ is from -55 to +150. The TJM is 150. The Tstg is from -55 to +150. The TL is 300 when 1.6 mm (0.063 in) from case for 10 s.

The following is about the characteristics. The minimum VDSS is 500 V at VGS=0 V, ID=1 mA. The minimum VGS(th) is 2 V and the maximum is 4 V at VDS=VGS, ID=8 mA. The maximum IGSS is ±200 nA when VGS=±20 VDC, VDS=0. The maximum IDSS is 400 A at VDS=0.8 • VDSS, TJ=25 and 2 mA at VGS=0 V, TJ=125. The maximum RDS(on) is 0.12 when VGS=10 V, I =0.5 • ID25 and pulse test, t 300 s, duty cycle d 2 %.

IXFN48N50Q Parameters

Technical/Catalog Information	IXFN48N50Q
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	48A
Rds On (Max) @ Id, Vgs	100 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	7000pF @ 25V
Power - Max	500W
Packaging	Tube
Gate Charge (Qg) @ Vgs	190nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFN48N50Q IXFN48N50Q

IXFN48N50Q Maximum Ratings

Symbol	Test Conditions	Maximum	Ratings
V_DSSV_DGR	T_J= 25°C to 150°C T_J = 25°C to 150°C; R_GS = 1 M	500 500	V V
V_GS V_GSM	Continuous Transient	±20 ±30	V V
I_D25I_DM IAR	T_C= 25°C T_C = 25°C, pulse width limited by T_{JM T_C = 25°C}	44N50 44 48N50 48 44N50 176 48N50 192	A A A
E_ARE_AS	T_C = 25°C T_C = 25°C	48 60 2.5	A mJ J
dv/dt	I_S I_DM, di/dt 100 A/s, V_DD V_DSS T_J 150°C, R_G = 2	5	V/ns
P_D	T_C= 25°C	500	W
T_J T_JM T_stg		-55 ... +150 150 -55 ... +150	°C °C °C
T_L	1.6 mm (0.062 in.) from case for 10 s	300	°C
M_d	Mounting torque Terminal connection torque	1.5/13 1.5/13	Nm/lb.in. Nm/lb.in.
Weight		30	g g

IXFN48N50Q Features

• IXYS advanced low Qg process
• Low gate charge and capacitances
- easier to drive
- faster switching
• Unclamped Inductive Switching (UIS) rated
• Low RDS (on)
• Fast intrinsic diode
• International standard package
• miniBLOC with Aluminium nitride isolation for low thermal resistance
• Low terminal inductance (<10 nH) and stray capacitance to heatsink (<35pf)
• Molding epoxies meet UL 94 V-0 flammability classification

IXFN48N50Q Typical Application

• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• Temperature and lighting controls

IXFN48N50U2 Parameters

Technical/Catalog Information	IXFN48N50U2
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	48A
Rds On (Max) @ Id, Vgs	100 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	8400pF @ 25V
Power - Max	520W
Packaging	Tube
Gate Charge (Qg) @ Vgs	270nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFN48N50U2 IXFN48N50U2

IXFN48N50U2 Maximum Ratings

Symbol	Test Conditions	Maximum	Ratings
V_DSSV_DGR	T_J= 25°C to 150°C T_J = 25°C to 150°C; R_GS = 1 M	500 500	V V
V_GS V_GSM	Continuous Transient	±20 ±30	V V
I_D25I_DM IAR	T_C= 25°C T_C = 25°C, pulse width limited by T_{JM T_C = 25°C}	44N50 44 48N50 48 44N50 176 48N50 192	A A A A
E_AREAS	T_C = 25°C T_C = 25°C	24 30	mJ J
dv/dt	I_S I_DM, di/dt 100 A/s, V_DD V_DSS T_J 150°C, R_G = 2	5	V/ns
P_D	T_C= 25°C	520	W
T_J T_JM T_stg		-55 ... +150 150 -55 ... +150	°C °C °C
V_ISOL	50/60 Hz, RMS t = 1 min IISOL 1 mA t = 1 s	2500 3000	V~ V~
M_d	Mounting torque Terminal connection torque	1.5/13 1.5/13	Nm/lb.in. Nm/lb.in.
Weight		30	g

IXFN48N50U2 Features

· Popular Buck & Boost circuit topologies
· International standard package miniBLOC SOT-227B
· Aluminium nitride isolation
- high power dissipation
· Isolation voltage 3000 V~
· Low R_{DS (on)} HDMOS^TM process
· Rugged polysilicon gate cell structure
· Low drain-to-case capacitance (<60 pF)
- reduced RFI
· Ultra-fast FRED diode with soft reverse recovery

IXFN48N50U2 Typical Application

·Power factor controls and buck regulators
·DC servo and robotic drives
·DC choppers
·Switch reluctance motor controls

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