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IXFN64N50P, IXFN64N50PD2, IXFN64N60P

Table of contents:
Info of IXFN64N50P
Info of IXFN64N50PD2
Info of IXFN64N60P

IXFN64N50P, IXFN64N50PD2, IXFN64N60P Selling Leads, Datasheet

MFG:IXYS Category:Discrete Semiconductor Products Package Cooled:61A/500V/MOS/1U D/C:N/A

IXFN64N50P, IXFN64N50PD2, IXFN64N60P Datasheet download

Five Points

Part Number: IXFN64N50P

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: 61A/500V/MOS/1U

D/C: N/A

Description: MOSFET N-CH 600V 50A SOT-227

Price Break

1
10
50
100
500
1000

Unit Price

30.36000
25.30000
20.24000
15.08000
13.66200
12.65000

Extended Price

30.36
253.00
1012.00
1508.00
6831.00
12650.00

(All prices are in USD) Prices for reference only

Attentive hint

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IXFN64N50P Parameters

Technical/Catalog Information	IXFN64N50P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	61A
Rds On (Max) @ Id, Vgs	85 mOhm @ 32A, 10V
Input Capacitance (Ciss) @ Vds	8700pF @ 25V
Power - Max	700W
Packaging	Tube
Gate Charge (Qg) @ Vgs	150nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFN64N50P IXFN64N50P

IXFN64N50P Maximum Ratings

Symbol	Test Conditions	Maximum Ratings
V_DSS V_DGR	T_J = 25°C to 150°C T_J = 25°C to 150°C; R_GE= 1 M	500 500	V V
V_GS V_GEM	Continuous Transient	±30 ±40	V V
I_D25 I_DM	T_C = 25°C T_C = 25°C, pulse width limited by TJM	64 150	A A
I_AR E_ARE_AS	T_C = 25°C T_C= 25°C T_C= 25°C	64 70 2.0	A mJ J
dv/dt	I_S I_DM, di/dt 100 A/µs, V_DD V_DSS, T_J 150°C, R_G = 4 Ω	20	V/ns
P_D	T_C = 25°C	700	W
T_J T_JM T_stg		-55 ... +150 150 -55 ... +150	°C °C °C
M_d	Mounting torque	1.13/10 Nm/lb.in.
V_ISOL	50/60 Hz t = 1 min I_ISOL 1 mA t= 1 s	2500 3000	V~ V~
M_d	Mounting torque Terminal connection torque (M4)	1.5/13 1.5/13	Nm/lb.in. Nm/lb.in.. .
Weight	SOT-227B	30	g

IXFN64N50P Features

International standard packages
Fast recovery diode
Unclamped Inductive Switching (UIS) rated
Low package inductance
- easy to drive and to protect

IXFN64N50P Typical Application

Easy to mount
Space savings
High power density

IXFN64N50PD2 Parameters

Technical/Catalog Information	IXFN64N50PD2
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	52A
Rds On (Max) @ Id, Vgs	85 mOhm @ 32A, 10V
Input Capacitance (Ciss) @ Vds	11000pF @ 25V
Power - Max	625W
Packaging	Tube
Gate Charge (Qg) @ Vgs	186nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFN64N50PD2 IXFN64N50PD2

IXFN64N60P Parameters

Technical/Catalog Information	IXFN64N60P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	50A
Rds On (Max) @ Id, Vgs	96 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	12000pF @ 25V
Power - Max	700W
Packaging	Tube
Gate Charge (Qg) @ Vgs	200nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFN64N60P IXFN64N60P

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