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IXFR50N50, IXFR55N50F, IXFR58N20Q

IXFR50N50, IXFR55N50F, IXFR58N20Q Selling Leads, Datasheet

MFG:IXYS  Category:Discrete Semiconductor Products  Package Cooled:TO-  D/C:TO-

IXFR50N50 Picture

IXFR50N50, IXFR55N50F, IXFR58N20Q Datasheet download

Five Points

Part Number: IXFR50N50

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: TO-

D/C: TO-

Description: MOSFET N-CH 200V 50A ISOPLUS247

 

 
 
 
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IXFR50N50 Suppliers

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  • IXF30025

  • Vendor: Intel D/C: 10+& Qty: BGA  Adddate: 2024-05-05
  • Inquire Now
  • Anwell Components Co.   China
    Contact: Ms.Una Xie   MSN:una0724@live.cn
    Tel: 0086-755-83677299
    Fax: 0086-755-83677763
    (37)
  • IXF30030

  • Vendor: Intel D/C: 10+& Qty: BGA  Adddate: 2024-05-05
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  • Anwell Components Co.   China
    Contact: Ms.Una Xie   MSN:una0724@live.cn
    Tel: 0086-755-83677299
    Fax: 0086-755-83677763
    (37)
  • IXF6402CE CA1

  • Vendor: Intel D/C: 10+& Qty: BGA  Adddate: 2024-05-05
  • Inquire Now
  • Anwell Components Co.   China
    Contact: Ms.Una Xie   MSN:una0724@live.cn
    Tel: 0086-755-83677299
    Fax: 0086-755-83677763
    (37)

About IXFR50N50

PDF/DataSheet Download

Datasheet: IXFR50N50

File Size: 94090 KB

Manufacturer: IXYS [IXYS Corporation]

Download : Click here to Download

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IXFR55N50F Suppliers

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  • IXF30025

  • Vendor: Intel D/C: 10+& Qty: BGA  Adddate: 2024-05-05
  • Inquire Now
  • Anwell Components Co.   China
    Contact: Ms.Una Xie   MSN:una0724@live.cn
    Tel: 0086-755-83677299
    Fax: 0086-755-83677763
    (37)
  • IXF30030

  • Vendor: Intel D/C: 10+& Qty: BGA  Adddate: 2024-05-05
  • Inquire Now
  • Anwell Components Co.   China
    Contact: Ms.Una Xie   MSN:una0724@live.cn
    Tel: 0086-755-83677299
    Fax: 0086-755-83677763
    (37)
  • IXF6402CE CA1

  • Vendor: Intel D/C: 10+& Qty: BGA  Adddate: 2024-05-05
  • Inquire Now
  • Anwell Components Co.   China
    Contact: Ms.Una Xie   MSN:una0724@live.cn
    Tel: 0086-755-83677299
    Fax: 0086-755-83677763
    (37)

About IXFR55N50F

PDF/DataSheet Download

Datasheet: IXFR55N50F

File Size: 511746 KB

Manufacturer: IXYS [IXYS Corporation]

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IXFR58N20Q Suppliers

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  • IXF30025

  • Vendor: Intel D/C: 10+& Qty: BGA  Adddate: 2024-05-05
  • Inquire Now
  • Anwell Components Co.   China
    Contact: Ms.Una Xie   MSN:una0724@live.cn
    Tel: 0086-755-83677299
    Fax: 0086-755-83677763
    (37)
  • IXF30030

  • Vendor: Intel D/C: 10+& Qty: BGA  Adddate: 2024-05-05
  • Inquire Now
  • Anwell Components Co.   China
    Contact: Ms.Una Xie   MSN:una0724@live.cn
    Tel: 0086-755-83677299
    Fax: 0086-755-83677763
    (37)
  • IXF6402CE CA1

  • Vendor: Intel D/C: 10+& Qty: BGA  Adddate: 2024-05-05
  • Inquire Now
  • Anwell Components Co.   China
    Contact: Ms.Una Xie   MSN:una0724@live.cn
    Tel: 0086-755-83677299
    Fax: 0086-755-83677763
    (37)

About IXFB38N100Q2

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Datasheet: IXFB38N100Q2

File Size: 157581 KB

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IXFR50N50 Parameters

Technical/Catalog InformationIXFR50N50
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C43A
Rds On (Max) @ Id, Vgs100 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds 9400pF @ 25V
Power - Max400W
PackagingTube
Gate Charge (Qg) @ Vgs330nC @ 10V
Package / CaseISOPLUS247?
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFR50N50
IXFR50N50

IXFR55N50F Maximum Ratings

Symbol Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS= 1 M
500
500
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
45
200
55
A
A
A

EAR
EAS

TC = 25°C
TC = 25°C
60
3.0

mJ
J
dv/dt IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2
10
V/ns
PD TC = 25°C
400
W

TJ
TJM
Tstg

-40 ... +150
150
-40 ... +150
°C
°C
°C
TL 1.6 mm (0.063 in.) from case for 10 s
300

°C

VISOL 50/60 Hz, RMS                 t = 1 min
2500
V~
Weight

5

g

IXFR55N50F Features

 Silicon chip on Direct-Copper-Bond substrate
   - High power dissipation
   - Isolated mounting surface
   - 2500V electrical isolation
 RF capable Mosfets
 Low gate charge and capacitances
   - easier to drive
   -faster switching
Low drain to tab capacitance(<30pF)
 Low RDS (on) HDMOSTM process
 Rugged polysilicon gate cell structure
Rated for Unclamped Inductive Load Switching (UIS)
 Fast intrinsic Rectifier

IXFR55N50F Typical Application

 DC-DC converters
 Battery chargers
 Switched-mode and resonant-mode power supplies
DC choppers
AC motor control

IXFR58N20Q Parameters

Technical/Catalog InformationIXFR58N20Q
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C50A
Rds On (Max) @ Id, Vgs40 mOhm @ 29A, 10V
Input Capacitance (Ciss) @ Vds 3600pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs140nC @ 10V
Package / CaseISOPLUS247?
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFR58N20Q
IXFR58N20Q

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