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IXFT15N100Q, IXFT15N80Q, IXFT16N80P

Table of contents:
Info of IXFT15N100Q
Info of IXFT15N80Q
Info of IXFT16N80P

IXFT15N100Q, IXFT15N80Q, IXFT16N80P Selling Leads, Datasheet

MFG:IXYS Category:Discrete Semiconductor Products Package Cooled:TO-268 D/C:TO

IXFT15N100Q, IXFT15N80Q, IXFT16N80P Picture

IXFT15N100Q, IXFT15N80Q, IXFT16N80P Datasheet download

Five Points

Part Number: IXFT15N100Q

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: TO-268

D/C: TO

Description: MOSFET N-CH 800V 16A TO-268

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IXFT15N100Q Parameters

Technical/Catalog Information	IXFT15N100Q
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	15A
Rds On (Max) @ Id, Vgs	700 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	4500pF @ 25V
Power - Max	360W
Packaging	Tube
Gate Charge (Qg) @ Vgs	170nC @ 5V
Package / Case	TO-268
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFT15N100Q IXFT15N100Q

IXFT15N100Q Maximum Ratings

Symbol	Test Conditions	Maximum	Ratings
V_DSSV_DGR	T_J= 25°C to 150°C T_J = 25°C to 150°C R_GS=1M	1000 1000	V V
V_GS V_GSM	Continuous Transient	±20 ±30	V V
I_D25I_DM IAR	T_C = 25°C T_C = 25°C pulse width limited by T_JM T_C = 25°C	15 60 15	A A A A
E_AR E_AS	T_C = 25°C	45 1.5	0mJ mJ
dv/dt	I_S I_DM, di/dt 100 A/s, V_DD V_DSS T_J 150°C, R_G = 2	5	V/ns
P_D	T_C= 25°C	360	W
T_J T_JM T_stg		-55 ... +150 150 -55 ... +150	°C °C °C
T_L	1.6 mm (0.062 in.) from case for 10 s	300	°C
M_d	Mounting torque TO-247 TO-264	1.13/10 0.9/6	Nm/lb.in. Nm/lb.in.
Weight	TO-247 TO-268 TO-264	6 4 10	g g g

IXFT15N100Q Features

·IXYS advanced low Qg process
·International standard packages
·Epoxy meet UL 94 V-0, flammability classification
·Low R_{DS (on)} low Qg
·Avalanche energy and current rated
·Fast intrinsic rectifier

IXFT15N100Q Typical Application

·Easy to mount
·Space savings
·High power density

IXFT15N80Q Parameters

Technical/Catalog Information	IXFT15N80Q
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	15A
Rds On (Max) @ Id, Vgs	600 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	4300pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	90nC @ 10V
Package / Case	TO-268
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFT15N80Q IXFT15N80Q

IXFT15N80Q Maximum Ratings

Symbol	Test Conditions	Maximum	Ratings
V_DSSV_DGR	T_J= 25°C to 150°C T_J = 25°C to 150°C; R_GS = 1 M	800 800	V V
V_GS V_GSM	Continuous Transient	±20 ±30	V V
I_D25I_DM IAR	T_C= 25°C T_C = 25°C, pulse width limited by T_{JM T_C = 25°C}	15 60 15	A A A
E_ARE_AS	T_C = 25°C T_C = 25°C	30 1.0	mJ J
dv/dt	I_S I_DM, di/dt 100 A/s, V_DD V_DSS T_J 150°C, R_G = 2	5	V/ns
P_D	T_C= 25°C	300	W
T_J T_JM T_stg		-55 ... +150 150 -55 ... +150	°C °C °C
T_L	1.6 mm (0.062 in.) from case for 10 s	300	°C
M_d	Mounting torque	1.13/10	Nm/lb.in. Nm/lb.in.
Weight	TO-247 TO-268	6 4	g g

IXFT15N80Q Features

• IXYS advanced low Qg process
• International standard packages
• Low R_{DS (on)}• Unclamped Inductive Switching (UIS) rated
• Fast switching
• Molding epoxies meet UL 94 V-0 flammability classification

IXFT15N80Q Typical Application

• Easy to mount
• Space savings
• High power density

IXFT16N80P Parameters

Technical/Catalog Information	IXFT16N80P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	16A
Rds On (Max) @ Id, Vgs	600 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	4600pF @ 25V
Power - Max	460W
Packaging	Tube
Gate Charge (Qg) @ Vgs	71nC @ 10V
Package / Case	TO-268
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFT16N80P IXFT16N80P

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