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• IXYS advanced low Qg process • International standard packages • Epoxy meet UL 94 V-0, flammability classification • Low RDS (on) low Qg • Avalanche energy and current rated • Fast intrinsic rectifier
IXFT16N90Q Typical Application
• Easy to mount • Space savings • High power density
IXFT20N80P Parameters
Technical/Catalog Information
IXFT20N80P
Vendor
IXYS
Category
Discrete Semiconductor Products
Mounting Type
Surface Mount
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
800V
Current - Continuous Drain (Id) @ 25° C
20A
Rds On (Max) @ Id, Vgs
520 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds
4685pF @ 25V
Power - Max
500W
Packaging
Tube
Gate Charge (Qg) @ Vgs
86nC @ 10V
Package / Case
TO-268
FET Feature
Standard
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
IXFT20N80P IXFT20N80P
IXFT20N80Q Parameters
Technical/Catalog Information
IXFT20N80Q
Vendor
IXYS
Category
Discrete Semiconductor Products
Mounting Type
Surface Mount
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
800V
Current - Continuous Drain (Id) @ 25° C
20A
Rds On (Max) @ Id, Vgs
420 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds
5100pF @ 25V
Power - Max
360W
Packaging
Tube
Gate Charge (Qg) @ Vgs
200nC @ 10V
Package / Case
TO-268
FET Feature
Standard
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
IXFT20N80Q IXFT20N80Q
IXFT20N80Q Features
• IXYS advanced low Qg process • International standard packages • Epoxy meet UL 94 V-0, flammability classification • Low RDS (on) low Qg • Avalanche energy and current rated • Fast intrinsic rectifier
IXFT20N80Q Typical Application
• Easy to mount • Space savings • High power density