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IXFT26N50, IXFT26N50Q, IXFT26N60

IXFT26N50, IXFT26N50Q, IXFT26N60 Selling Leads, Datasheet

MFG:IXYS  Category:Discrete Semiconductor Products  Package Cooled:09+  D/C:TO

IXFT26N50, IXFT26N50Q, IXFT26N60 Picture

IXFT26N50, IXFT26N50Q, IXFT26N60 Datasheet download

Five Points

Part Number: IXFT26N50

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: 09+

D/C: TO

Description: MOSFET N-CH 500V 26A TO-268

 

 
 
 
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IXFT26N50 Suppliers

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  • IXF30025

  • Vendor: Intel D/C: 10+& Qty: BGA  Adddate: 2026-08-23
  • Inquire Now
  • Anwell Components Co.   China
    Contact: Ms.Una Xie   MSN:una0724@live.cn
    Tel: 0086-755-83677299
    Fax: 0086-755-83677763
    (37)
  • IXF30030

  • Vendor: Intel D/C: 10+& Qty: BGA  Adddate: 2026-08-23
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  • Anwell Components Co.   China
    Contact: Ms.Una Xie   MSN:una0724@live.cn
    Tel: 0086-755-83677299
    Fax: 0086-755-83677763
    (37)
  • IXF6402CE CA1

  • Vendor: Intel D/C: 10+& Qty: BGA  Adddate: 2026-08-23
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  • Anwell Components Co.   China
    Contact: Ms.Una Xie   MSN:una0724@live.cn
    Tel: 0086-755-83677299
    Fax: 0086-755-83677763
    (37)

About IXFT26N50

PDF/DataSheet Download

Datasheet: IXFT26N50

File Size: 161792 KB

Manufacturer: IXYS [IXYS Corporation]

Download : Click here to Download

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IXFT26N50Q Suppliers

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  • IXF30025

  • Vendor: Intel D/C: 10+& Qty: BGA  Adddate: 2026-08-23
  • Inquire Now
  • Anwell Components Co.   China
    Contact: Ms.Una Xie   MSN:una0724@live.cn
    Tel: 0086-755-83677299
    Fax: 0086-755-83677763
    (37)
  • IXF30030

  • Vendor: Intel D/C: 10+& Qty: BGA  Adddate: 2026-08-23
  • Inquire Now
  • Anwell Components Co.   China
    Contact: Ms.Una Xie   MSN:una0724@live.cn
    Tel: 0086-755-83677299
    Fax: 0086-755-83677763
    (37)
  • IXF6402CE CA1

  • Vendor: Intel D/C: 10+& Qty: BGA  Adddate: 2026-08-23
  • Inquire Now
  • Anwell Components Co.   China
    Contact: Ms.Una Xie   MSN:una0724@live.cn
    Tel: 0086-755-83677299
    Fax: 0086-755-83677763
    (37)

About IXFT26N50Q

PDF/DataSheet Download

Datasheet: IXFT26N50Q

File Size: 137272 KB

Manufacturer: IXYS [IXYS Corporation]

Download : Click here to Download

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IXFT26N60 Suppliers

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  • IXF30025

  • Vendor: Intel D/C: 10+& Qty: BGA  Adddate: 2026-08-23
  • Inquire Now
  • Anwell Components Co.   China
    Contact: Ms.Una Xie   MSN:una0724@live.cn
    Tel: 0086-755-83677299
    Fax: 0086-755-83677763
    (37)
  • IXF30030

  • Vendor: Intel D/C: 10+& Qty: BGA  Adddate: 2026-08-23
  • Inquire Now
  • Anwell Components Co.   China
    Contact: Ms.Una Xie   MSN:una0724@live.cn
    Tel: 0086-755-83677299
    Fax: 0086-755-83677763
    (37)
  • IXF6402CE CA1

  • Vendor: Intel D/C: 10+& Qty: BGA  Adddate: 2026-08-23
  • Inquire Now
  • Anwell Components Co.   China
    Contact: Ms.Una Xie   MSN:una0724@live.cn
    Tel: 0086-755-83677299
    Fax: 0086-755-83677763
    (37)

About IXFT26N60

PDF/DataSheet Download

Datasheet: IXFT26N60

File Size: 72660 KB

Manufacturer: IXYS [IXYS Corporation]

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IXFT26N50 Parameters

Technical/Catalog InformationIXFT26N50
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C26A
Rds On (Max) @ Id, Vgs200 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 4200pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs160nC @ 10V
Package / CaseTO-268
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFT26N50
IXFT26N50

IXFT26N50 Features

• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
  - easy to drive and to protect
• Fast intrinsic Rectifier

IXFT26N50 Typical Application

• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays

IXFT26N50Q Parameters

Technical/Catalog InformationIXFT26N50Q
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C26A
Rds On (Max) @ Id, Vgs200 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 3900pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs95nC @ 10V
Package / CaseTO-268
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFT26N50Q
IXFT26N50Q

IXFT26N50Q General Description

·Easy to mount
·Space savings
·High power density

IXFT26N50Q Maximum Ratings

Symbol Test Conditions Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
500
500
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
24N50 24
26N50 26
24N50 96
26N50 104
24N50 24
26N50 26
A
A
A


EAR
EAS

TC = 25°C
TC = 25°C
30
1.5

mJ
J

dv/dt IS IDM, di/dt 100 A/s, VDD VDSS
TJ 150°C, RG = 2
5 V/ns
PD TC = 25°C 300 W
TJ
TJM
Tstg
  -55 ... +150
150
-55 ... +150
°C
°C
°C
TL 1.6 mm (0.062 in.) from case for 10 s 300 °C
Md
Mounting torque
1.13/10
Nm/lb.in.
Nm/lb.in.
Weight TO-247
TO-268
6
4
g
g

IXFT26N50Q Features

·IXYS advanced low Qg process
·International standard packages
·Low RDS (on)
·Unclamped Inductive Switching (UIS) rated
·Fast switching
·Molding epoxies meet UL 94 V-0
·flammability classification

IXFT26N60 Maximum Ratings

Symbol
Test Conditions
Maximum
Ratings
IXFH/ IXFT
IXFK
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
600
600
600
600
V
V
VGS
VGSM
Continuous
Transient
±20
±30
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
26
104
26
28
112
28
A
A
A
EAR
TC = 25°C
50
50

EAS

TC = 25°C
1.5
1.5
mjj
dv/dt
IS IDM, di/dt 100 A/s, VDD VDSS,
TJ 150°C, RG = 2
5
5
V/ns

PD

TC = 25°C

360

460

W

TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C

TL

1.6 mm (0.063 in) from case for 10 s

300

300

°C

Md
Mounting torque TO-247
1.13/100
.9/6
Nm/lb.in.
Weight
6
10
g

IXFT26N60 Features

• International standard packages
• EpoxymeetUL94V-0, flammability classification
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Avalanche energy and current rated
• Fast intrinsic Rectifier

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