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IXFX24N100, IXFX24N100F, IXFX24N120Q2

Table of contents:
Info of IXFX24N100
Info of IXFX24N100F
Info of IXFX24N120Q2

IXFX24N100, IXFX24N100F, IXFX24N120Q2 Selling Leads, Datasheet

MFG:IXYS Category:Discrete Semiconductor Products Package Cooled:IXYS D/C:07+

IXFX24N100, IXFX24N100F, IXFX24N120Q2 Datasheet download

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Part Number: IXFX24N100

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: IXYS

D/C: 07+

Description: MOSFET N-CH 1000V 24A PLUS 247

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IXFX24N100 Parameters

Technical/Catalog Information	IXFX24N100
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	24A
Rds On (Max) @ Id, Vgs	390 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	8700pF @ 25V
Power - Max	560W
Packaging	Tube
Gate Charge (Qg) @ Vgs	267nC @ 10V
Package / Case	PLUS 247
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFX24N100 IXFX24N100

IXFX24N100 Maximum Ratings

Symbol	Test Conditions	Maximum Ratings
V_DSS V_DGR	T_J = 25 to 150 T_J = 25 to 150; R_GS = 1 M	1000 1000	V V
V_GS V_GSM	Continuous Transient	±20 ±30	V V
I_D25 I_DM I_AR	T_C = 25 T_C = 25, Note 1 T_C = 25	24 96 24	A A A
E_AR E_AS	T_C= 25 T_C = 25	60 3	mJ J
dv/dt	I_S I_DM, di/dt 100 A/s, V_DD V_DSS T_J 150, R_G = 2	5	V/ns
P_D	T_C = 25°C	560	W
T_J T_JM T_stg T_L	1.6 mm (0.063 in.) from case for 10 s	-55 ... +150 150 -55 ... +150 300
M_d	Mounting torque TO-264		Nm/lb.in.
Weight	PLUS 247 TO-264		6 g 10 g

IXFX24N100 Features

· International standard packages
· Low R_{DS (on)}HDMOS^TM process
· Rugged polysilicon gate cell structure
· Unclamped Inductive Switching (UIS) rated
· Low package inductance
- easy to drive and to protect
· Fast intrinsic rectifier

IXFX24N100 Typical Application

· DC-DC converters
· Battery chargers
· Switched-mode and resonant-mode power supplies
· DC choppers
· AC motor control
· Temperature and lighting controls

IXFX24N100F Maximum Ratings

Symbol	Test Conditions	Maximum	Ratings
V_DSSV_DGR	T_J= 25°C to 150°C T_J = 25°C to 150°C; R_GS = 1 MΩ	1000 1000	V V
_VGSV_GSM	Continuous Transient	±20 ±30	V V
I_D25I_DMI_AR	T_C= 25°C T_C = 25°C, pulse width limited by T_JMT_C = 25°C	24 96 24	A A A
E_AR E_AS	T_C = 25°C T_C= 25°C	60 3.0	mJ J
dv/dt	I_S I_DM, di/dt 100 A/µs, V_DD V_DSS T_J 150°C, R_G = 2 Ω	10	V/ns
P_D	T_C= 25°C	560	W
T_J T_JM T_stg		-55 ... +150 150 -55 ... +150	°C °C °C
T_L	1.6 mm (0.063 in.) from case for 10 s	300	°C
M_d	Mounting torque TO-264	0.4/6	Nm/lb.in.
Weight	PLUS 247 TO-264	6 10	g g

IXFX24N100F Features

· RF capable MOSFETs
· Double metal process for low gate resistance
· Unclamped Inductive Switching (UIS) rated
· Low package inductance
- easy to drive and to protect
· Fast intrinsic rectifier

IXFX24N100F Typical Application

·DC-DC converters
·Switched-mode and resonant-mode power supplies, >500kHz switching
·DC choppers
·Pulse generation
·Laser drivers

IXFX24N120Q2 Maximum Ratings

Symbol	Test Conditions	Maximum	Ratings
V_DSSV_DGR	T_J= 25°C to 150°C T_J = 25°C to 150°C.R_GS=1M	1200 1200	V V
V_GS V_GSM	Continuous Transient	±30 ±40	V V
I_D25I_DM IAR	T_C = 25°C T_C = 25°C pulse width limited by T_JM T_C = 25°C	24 96 12	A A A A
E_AR EAS	T_C = 25°C T_C = 25°C	30 4.0	0mJ mJ
dv/dt	I_S I_DM, di/dt 100 A/s, V_DD V_DSS T_J 150°C, R_G = 2	20	V/ns
P_D	T_C= 25°C	830	W
T_J T_JM T_stg		-55 ... +150 150 -55 ... +150	°C °C °C
T_L	1.6 mm (0.062 in.) from case for 10 s	300	°C
M_d	Mounting torque TO-264	0.9/6	Nm/lb.in. Nm/lb.in.
Weight	PLUS-247 TO-264	6 10	g g g

IXFX24N120Q2 Features

·Double metal process for low gate resistance
·International standard packages
·Epoxy meet UL 94 V-0, flammability classification
·Avalanche energy and current rated
·Fast intrinsic Rectifier

IXFX24N120Q2 Typical Application

·Easy to mount
·Space savings
·High power density

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