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LTE400WQ-F04, LTE42005S, LTE-4206

Table of contents:
Info of LTE400WQ-F04
Info of LTE42005S
Info of LTE-4206

LTE400WQ-F04, LTE42005S, LTE-4206 Selling Leads, Datasheet

MFG:Lite-On Inc Category:Optoelectronics Package Cooled:PB FREE D/C:2007+

LTE400WQ-F04, LTE42005S, LTE-4206 Datasheet download

Five Points

Part Number: LTE-4206

Category: Optoelectronics

MFG: Lite-On Inc

Package Cooled: PB FREE

D/C: 2007+

Description: EMITTER IR 3MM 940NM CLEAR

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LTE42005S General Description

NPN silicon planar epitaxial microwave power transistor IN a SOT440A metal ceramic flange package with the emitter connected to the flange.

LTE42005S Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_CBO	collector-base voltage	open emitter	-	40	V
V_CER	collector-emitter voltage	RBE = 70W	-	35	V
V_CEO	emitter-base voltage	open base	-	16	V
V_EBO	emitter-base voltage	open collector	-	3	V
I_C	DC collector current (DC)		-	250	mA
P_tot	total power dissipation	Tmb<= 75 °C	-	4	W
T_stg	storage temperature		-65	+200	°C
T_j	operating junction temperature		-	200	°C
T_sld	soldering temperature	at 0.3 mm from ceramic; t <= 10 s	-	235	°C

LTE42005S Features

· Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR
· Gold metallization realizes very stable characteristics and excellent lifetime
· Input matching cell improves input impedance and allows an easier design of circuits

LTE42005S Typical Application

· Common emitter class-A linear power amplifiers up to 4.2 GHz.

LTE-4206 Parameters

Technical/Catalog Information	LTE-4206
Vendor	Lite-On Inc
Category	Optoelectronics
Voltage - Forward (Vf) Typ	1.2V
Current - DC Forward (If)	60mA
Wavelength	940nm
Viewing Angle	20°
Radiant Intensity (Ie) Min @ If	2.71mW @ 20mA
Mounting Type	Through Hole
Package / Case	T-1
Orientation	Top View
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	LTE 4206 LTE4206 160 1028 ND 1601028ND 160-1028

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