LTE42012R, LTE4206, LTE4208G Selling Leads, Datasheet
MFG:ph Package Cooled:ph D/C:dc99
LTE42012R, LTE4206, LTE4208G Datasheet download
Part Number: LTE42012R
MFG: ph
Package Cooled: ph
D/C: dc99
LTE42012R, LTE4206, LTE4208G
- Table of contents:
Info of LTE42012R
Info of LTE4206
Info of LTE4208G
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About LTE42012R
PDF/DataSheet Download
Datasheet: LTE42012R
File Size: 74646 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About LTE4206
PDF/DataSheet Download
Datasheet: LTE4206
File Size: 106300 KB
Manufacturer: LITEON [Lite-On Technology Corporation]
Download : Click here to Download
About LTE21009
PDF/DataSheet Download
Datasheet: LTE21009
File Size: 57063 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
LTE42012R General Description
NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.
LTE42012R Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage | open emitter | - | 40 | V |
| VCER | collector-emitter voltage | RBE =70W | - | 20 | V |
| VCEO | emitter-base voltage | open base | - | 16 | V |
| VEBO | emitter-base voltage | open collector | - | 3 | V |
| IC | DC collector current (DC) | - | 800 | mA | |
| Ptot | total power dissipation | Tmb<= 75 °C | - | 8 | W |
| Tstg | storage temperature | -65 | +200 | °C | |
| Tj | operating junction temperature | - | 200 | °C | |
| Tsld | soldering temperature | at 0.3 mm from ceramic; t <= 10 s |
- | 235 | °C |
LTE42012R Features
· Interdigitated structure provides high emitter efficiency
· Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR
· Gold metallization realizes very stable characteristics and excellent lifetime
· Multicell geometry gives good balance of dissipated power and low thermal resistance
· Input matching cell improves input impedance and allows an easier design of wideband circuits.
· Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR
· Gold metallization realizes very stable characteristics and excellent lifetime
· Multicell geometry gives good balance of dissipated power and low thermal resistance
· Input matching cell improves input impedance and allows an easier design of wideband circuits.
LTE42012R Typical Application
· Common emitter class-A power amplifiers up to 4.2 GHz in CW conditions for military and professional applications.
LTE4206 Maximum Ratings
|
PARAMETER |
MAXIMUM RATING |
UNIT |
| Power Dissipation |
90 |
mW |
| Peak Forward Current (300pps, 10 s pulse) |
1 |
A |
| Continuous Forward Current |
60 |
mA |
| Reverse Voltage |
5 |
V |
| Operating Temperature Range |
-40 to + 85 | |
| Storage Temperature Range |
-55 to + 100 | |
| Lead Soldering Temperature [1.6mm(.063") From Body] |
260 for 5 Seconds | |
LTE4206 Features
· SELECTED TO SPECIFIC ON-LINE INTENSITY AND RADIANT INTENSITY RANGES
· LOW COST MINIATURE PLASTIC END LOOKING PACKAGE
· MECHANICALLY AND SPECTRALLY MATCHED TO THE LTR-4206 SERIES OF PHOTOTRANSISTOR
·CLEAR TRANSPARENT COLOR PACKAGE
· LOW COST MINIATURE PLASTIC END LOOKING PACKAGE
· MECHANICALLY AND SPECTRALLY MATCHED TO THE LTR-4206 SERIES OF PHOTOTRANSISTOR
·CLEAR TRANSPARENT COLOR PACKAGE
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