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MGW12N120, MGW12N120D, MGW14N60ED

MGW12N120, MGW12N120D, MGW14N60ED Selling Leads, Datasheet

MFG:ON  Package Cooled:09+  D/C:TO

MGW12N120, MGW12N120D, MGW14N60ED Picture

MGW12N120, MGW12N120D, MGW14N60ED Datasheet download

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Part Number: MGW12N120

 

MFG: ON

Package Cooled: 09+

D/C: TO

 

 

 
 
 
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About MGW12N120

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Datasheet: MGW12N120

File Size: 234476 KB

Manufacturer: MOTOROLA [Motorola, Inc]

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About MGW12N120D

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Datasheet: MGW12N120D

File Size: 256846 KB

Manufacturer: ONSEMI [ON Semiconductor]

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Datasheet: MGW14N60ED

File Size: 157699 KB

Manufacturer: ONSEMI [ON Semiconductor]

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MGW12N120 General Description

The absolute maximum ratings of the MGW12N120 can be summarized as:(1):the rating is collectoremitter voltage,the symbol is VCES,the value is 1200,the unit is Vdc;(2):the rating is collectorgate voltage (RGE = 1.0 M),the symbol is VCGR,the value is 1200,the unit is Vdc;(3):the rating is gateemitter voltage continuous,the symbol is VGE,the value is ±20,the unit is Vdc;(4):the rating is collector current continuous @ TC = 25,the symbol is IC25,the value is 20,the unit is Vdc;(5):the rating is collector current continuous @ TC = 90,the symbol is IC90,the value is 12,the unit is Vdc;(6):the rating is collector current continuous repetitive pulsed current,the symbol is ICM,the value is 40,the unit is Apk;(7):the rating is total power dissipation @ TC = 25,the symbol is PD,the value is 125,the unit is Watts;(8):the rating is total power dissipation derate above 25,the symbol is PD,the value is 0.98,the unit is W/;(9):the rating is operating and storage junction temperature range,the symbol is TJ,Tstg,the value is -55 to 150,the unit is ;(10):the rating is short circuit withstand time (VCC = 720 Vdc,VGE = 15Vdc,TJ = 125,RG =20W),the symbol is Tsc,the value is 10,the unit is s;(11):the rating is thermal resistance junction to case IGBT,the symbol is RJC,the value is 1.0,the unit is /W;(12):the rating is thermal resistance junction to ambient,the symbol is RJA,the value is 45,the unit is /W;(13):the rating is maximum lead temperature for soldering purposes,1/8, from case for 5 seconds,the symbol is TL,the value is 260,the unit is ;(14):the rating is mounting torque,632 or M3 screw,the value is 10 lbf`in (1.13 N`m).

MGW12N120 Maximum Ratings

Rating Symbol Value Unit
CollectorEmitter Voltage VCES 1200 Vdc
CollectorGate Voltage (RGE = 1.0 MW) VCGR 1200 Vdc
GateEmitter Voltage - Continuous VGE ±20 Vdc
Collector Current - Continuous @ TC = 25°C
- Continuous @ TC = 90°C
- Repetitive Pulsed Current (1)
IC25
IC90
ICM
20
12
40
Adc
Apk
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD 125
0.98
Watts
W/°C
Operating and Storage Junction Temperature Range TJ, Tstg 55 to 150 °C
Short Circuit Withstand Time
(VCC = 360 Vdc, VGE = 15 Vdc, RG = 20 W)
tsc 10 s
Thermal Resistance - Junction to Case IGBT
Thermal Resistance - Junction to Ambient
RqJC
RqJA
1.0
45
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 5 seconds TL 260 °C
Mounting Torque, 632 or M3 screw 10 lbfin (1.13 Nm)

MGW12N120D Maximum Ratings

Rating Symbol Value Unit
CollectorEmitter Voltage VCES 1200 Vdc
CollectorGate Voltage (RGE = 1.0 MW) VCGR 1200 Vdc
GateEmitter Voltage - Continuous VGE ± 20 Vdc
Collector Current - Continuous @ TC = 25°C
                            - Continuous @ TC = 90°C
                            - Repetitive Pulsed Current (1)
IC25
IC90
ICM
20
12
40
Adc
Apk
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD 125
0.98
Watts
W/°C
Operating and Storage Junction Temperature Range TJ, Tstg 55 to 150 °C
Short Circuit Withstand Time
(VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 W)
tsc 10 s
Thermal Resistance - Junction to Case IGBT
                               - Junction to Case Diode
                               - Junction to Ambient
RqJC
RqJC
RqJA
1.0
1.4
45
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 5 seconds TL 260

°C

Mounting Torque, 632 or M3 screw 10 lbfin (1.13 Nm)

MGW14N60ED Maximum Ratings

Rating Symbol Value Unit
CollectorEmitter Voltage VCES 600 Vdc
CollectorGate Voltage (RGE = 1.0 MW) VCGR 600 Vdc
GateEmitter Voltage - Continuous VGE ±20 Vdc
Collector Current - Continuous @ TC = 25°C
- Continuous @ TC = 90°C
- Repetitive Pulsed Current (1)
IC25
IC90
ICM
18
14
28
Adc
Apk
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD 112
0.89
Watts
W/°C
Operating and Storage Junction Temperature Range TJ, Tstg 55 to 150 °C
Short Circuit Withstand Time
(VCC = 360 Vdc, VGE = 15 Vdc, RG = 20 W)
tsc 10 s
Thermal Resistance - Junction to Case IGBT
Thermal Resistance - Junction to Ambient
RqJC
RqJA
1.1
1.9
45
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 5 seconds TL 260 °C
Mounting Torque, 632 or M3 screw 10 lbfin (1.13 Nm)

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