MMFT4P03HD, MMFT5P03H, MMFT5P03HD Selling Leads, Datasheet
MFG:ON Package Cooled:SOT-223 D/C:08+
MMFT4P03HD, MMFT5P03H, MMFT5P03HD Datasheet download
Part Number: MMFT4P03HD
MFG: ON
Package Cooled: SOT-223
D/C: 08+
MMFT4P03HD, MMFT5P03H, MMFT5P03HD
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Info of MMFT4P03HD
Info of MMFT5P03H
Info of MMFT5P03HD
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About MMFR-29C516E-31SB
PDF/DataSheet Download
Datasheet: MMFR-29C516E-31SB
File Size: 96974 KB
Manufacturer: ATMEL [ATMEL Corporation]
Download : Click here to Download
About MMFT5P03HD
PDF/DataSheet Download
Datasheet: MMFT5P03HD
File Size: 203180 KB
Manufacturer: ONSEMI [ON Semiconductor]
Download : Click here to Download
About MMFT5P03HD
PDF/DataSheet Download
Datasheet: MMFT5P03HD
File Size: 203180 KB
Manufacturer: ONSEMI [ON Semiconductor]
Download : Click here to Download
MMFT5P03HD General Description
MMFT5P03HD is an advanced power MOSFET which utilizes Motorola!fls High Cell Density HDTMOS process. This miniatur surface mount MOSFET features ultra low RDS(on) and true logic level performance. It is capable of withstanding high energy in the avalanche and commutation modes and the drain-to-source dio has a very low reverse recovery time. MMFT5P03HD devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc-dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
MMFT5P03HD Maximum Ratings
|
Rating |
Symbol |
Max |
Unit | |
| Drain-to-Source Volta |
VDSS |
30 |
V | |
| Drain-to-Gate Voltage (RGS= 1.0 M) |
VDGR |
30 |
V | |
| Gate-to-Source Voltage - Continu |
VGS |
20 |
V | |
| 1 inch SQ. FR-4 or G-10 PCB 10 seconds |
Thermal Resistance - Junction to Ambien Total Power Dissipation @ TA = 25 Linear Derating Factor Drain Current - Continuous @ TA = 25 Continuous @ TA = 70(1) Pulsed Drain Current |
RTHJA |
40 |
/W |
| Minimum FR-4 or G-10 PCB 10 seconds |
Thermal Resistance - Junction to Ambien Total Power Dissipation @ TA = 25 Linear Derating Factor Drain Current - Continuous @ TA = 25 Continuous @ TA = 70(1) Pulsed Drain Current |
RTHJA |
80 |
/W |
| Operating and Storage Temperature Range |
TJ , Tstg |
-55 to 150 |
||
| Single Pulse Drain-to-Source Avalanche Energy - Startin TJ= 25 (VDD = 30 Vdc, VGS = 10 Vdc, Peak IL = 12 Apk, L = 3.5 mH, RG = 25 ) |
EAS |
250 |
mJ | |
` Repetitive rating; pulse width limited by maximum junction temperature.
MMFT5P03HD Features
` Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
` Logic Level Gate Drive-Can Be Driven by Logic IC
` Miniature SOT-223 Surface Mount Package - Saves Boa Space
` Diode Is Characterized for Use In Bridge Circuits
` Diode Exhibits High Speed, With Soft Recovery
` IDSS Specified at Elevated Temperature
` Avalanche Energy Specified
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