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Part Number: MMFT2406T

 

 

 

 

Description: This TMOS medium power field effect transistor is designed for high speed, low loss power switching ap...


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MMFT2406T General Description


This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers. The device is housed in the SOT-223 package which is designed fo medium power surface mount applications.

MMFT2406T Maximum Ratings

Rating

Symbol

Value

Unit

Drain-to-Source Volta

VDSS

240

Volts

Gate-to-Source Voltage - Non -Repeti

VGS

±20

Volts

Drain Current

ID

700

mAdc

Total Power Dissipation @ TA = 25(1)
Derate above 25

PD

1.5
12

Watts
mW/

Operating and Storage Temperature
Range

TJ ,Tstg

-65 to 150

MMFT2406T Features

`  Silicon Gate for Fast Switching Speeds
`  High Voltage - 240 Vdc
`  Low Drive Requirement
` The SOT-223 Package can be soldered using wave or reflow The formed leads absorb thermal stress during soldering,eliminating the possibility of damage to the die.
` Available in 12 mm Tape and Reel
             Use MMFT2406T1 to order the 7 inch/1000 unit reel.
             Use MMFT2406T3 to order the 13 inch/4000 unit reel.

MMFT2406T datasheet

MMFT2406T
PDF/DataSheet Download

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