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MFG:MOTO  D/C:07+  

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Part Number: MMFT1N10

 

MFG: MOTO

 

D/C: 07+

Description: This advanced E-CFT is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche a...


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MMFT1N10 General Description


This advanced E-CFT is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commuta-tion modes. This new energy efficient device also offers a drain-Cto-Csour diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies dc-Cd converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additiona safety margin against unexpected voltage transients. The device is housed in the SOT-C223 package which is designed for mediu power surface mount applications.

MMFT1N10 Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Cto-CSource Volta

VDS

100

Vdc

Gate-Cto-CSource Voltage - Continu

VGS

±20

Vdc

Drain Current - Continuou
                      - Pulse

ID
IDM

1
4

Adc

Total Power Dissipation @ TA = 25
Derate above 25

PD(1)

0.8
6.4

Watts
mW/

Operating and Storage Temperature Range

TJ , Tstg

-66 to 150

Single Pulse Drain-Cto-CSource Avalanche Energy - Startin TJ= 25
(VDD = 10 V, VGS = 5 V, Peak IL = 2 A, L = 0.2 mH, RG = 25 )

EAS

168

mJ

MMFT1N10 Features

` Silicon Gate for Fast Switching Speeds
` Low RDS(on) - 0.25 max
` The SOT-C223 Package can be Soldered Using Wave or Re-flow. The Formed Leads Absorb Thermal Stress During Sol-dering, Eliminating the Possibility of Damage to the Die
` Available in 12 mm Tape and Reel
    Use MMFT1N10ET1 to order the 7 inch/1000 unit reel.
    Use MMFT1N10ET3 to order the 13 inch/4000 unit reel.

MMFT1N10 datasheet

MMFT1N10
PDF/DataSheet Download

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