MMFT107T1

MOSFET N-CH 200V 250MA SOT223

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SeekIC No. : 003430553 Detail

MMFT107T1: MOSFET N-CH 200V 250MA SOT223

floor Price/Ceiling Price

Part Number:
MMFT107T1
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Series: - Manufacturer: ON Semiconductor
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 11.5 dB at 500 MHz Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 200V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 250mA
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 14 Ohm @ 200mA, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) @ Vgs: -
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 60pF @ 25V
Power - Max: 800mW Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Gate Charge (Qg) @ Vgs: -
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Drain to Source Voltage (Vdss): 200V
Packaging: Digi-Reel®
Input Capacitance (Ciss) @ Vds: 60pF @ 25V
Current - Continuous Drain (Id) @ 25° C: 250mA
Power - Max: 800mW
Vgs(th) (Max) @ Id: 3V @ 1mA
Rds On (Max) @ Id, Vgs: 14 Ohm @ 200mA, 10V
Manufacturer: ON Semiconductor


Features:

· Silicon Gate for Fast Switching Speeds
· Low Drive Requirement
· The SOT-C223 Package can be soldered using wave or reflow The formed leads absorb thermal stress during soldering eliminating the possibility of damage to the die.




Pinout

  Connection Diagram


Specifications

Rating

Symbol

Value

Unit

Drain-to-Source Volta

VDSS

200

Volts

Gate-to-Source Voltage - Non -Repeti

VGS

20

Volts

Drain Current

ID

250

mAdc

Total Power Dissipation @ TA = 25
(Note 1.)
Derate above 25

PD

0.8
6.4

Watts
mW/

Operating and Storage Temperature
Range

TJ ,Tstg

-65 to 150




Description

This MMFT107T1 Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, dc-Cdc converters solenoid and relay drivers. The device is housed in the SOT-C22 package which is designed for medium power surface mount applications.




Parameters:

Technical/Catalog InformationMMFT107T1
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C250mA
Rds On (Max) @ Id, Vgs14 Ohm @ 200mA, 10V
Input Capacitance (Ciss) @ Vds 60pF @ 25V
Power - Max800mW
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs-
Package / CaseSOT-223, SC-73, TO-261 (3 Leads + Tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MMFT107T1
MMFT107T1
MMFT107T1OSDKR ND
MMFT107T1OSDKRND
MMFT107T1OSDKR



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