MMFT1N10E

This advanced MMFT1N10E EFET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a  draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies,dcdc converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. The MMFT1N10E is housed in the SOT223 package which is designed for medium power surface mount applications.

• Silicon Gate for Fast Switching Speeds
• Low R_DS(on) - 0.25 max
• The SOT223 Package can be Soldered Using Wave or Reflow.
   The Formed Leads Absorb Thermal Stress During Soldering,Eliminating the Possibility of Damage to the Die
• Available in 12 mm Tape and Reel
   Use MMFT1N10ET1 to order the 7 inch/1000 unit reel.
   Use MMFT1N10ET3 to order the 13 inch/4000 unit reel.