MTB10N40, MTB10N40E, MTB1306
Package Cooled:SOT-263 D/C:08+
Table of contents:
Part Number: MTB10N40
Package Cooled: SOT-263
D/C: 08+
MTB10N40 Supplier
MTB10N40
MFG: ON Package Cooled: 263 D/C: 05+ Qty: 10000
Contact: Mr.MIKEHU 
Tel: 86-755-83205231
Adddate: 2010-03-20
MTB10N40
MFG: ON Package Cooled: SOT-263 D/C: 08+ Qty: 10000
Contact: Ms.Melissa
Tel: 86-755-83005250
Adddate: 2010-03-20
MTB10N40
MFG: ON Package Cooled: 263 D/C: 04+ Qty: 10000 Note:
Shenzhen Flying Electornics CO,Ltd 
Contact: Mr.Zhang
Tel: 86+-755-83014266
Adddate: 2010-03-20
MTB10N40E
MFG: ON D/C: 2006 Qty: 800
Contact: Mr.MIKEHU
Tel: 86-755-83205231
Adddate: 2010-03-20
MTB10N40E
MFG: ON Package Cooled: 05+ D/C: TO-263 Qty: 30000 Note: new in stock
Contact: Ms.winnie
Tel: 86-760-88228528
Adddate: 2010-03-20
MTB10N40E
MFG: N/A Package Cooled: N/A D/C: 08+09+ Qty: 8280 Note: STOCK
Contact: Ms.Cherry Feng
Tel: 86-755-8288-4368
Adddate: 2010-03-20
MTB10N40E
MFG: N/A Package Cooled: NA/ D/C: 09+ Qty: 5864
Contact: Mr.John Zhang
Tel: 86-755-8288-4268
Adddate: 2010-03-20
MTB10N40E
MFG: ON Package Cooled: to263 D/C: 09+/pb Qty: 30000
HONG KONG TERRY ELECTRONICS INTERNATIONAL COMPANY
Contact: Ms.Cherrin Ho
Tel: 86-755-23956340
Adddate: 2010-03-20
About MTB10N40E
PDF/DataSheet Download
Datasheet: MTB10N40E
File Size: 279709 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
MTB1306 Supplier
MTB1306
MFG: MOTO Package Cooled: TO-263 Qty: 21000
Contact: Mr.laura chen
Tel: 86-0755-83017317
Adddate: 2010-03-20
MTB1306
MFG: M Package Cooled: to-3 D/C: 09+ Qty: 50000
Aslan Internatinal Trade Co., Limited
Contact: Mr.David King
Tel: 86-754-84420881
Adddate: 2010-03-20
MTB1306
MFG: MOT Package Cooled: TO-263 D/C: 09+ Qty: 1600
Aslan Internatinal Trade Co., Limited
Contact: Mr.David King
Tel: 86-754-84420881
Adddate: 2010-03-20
MTB1306
MFG: MOT D/C: 00+ Qty: 1600 Note: ＮＥＷ＆ＯＲＩＧＩＮＡＬ
HitSem International Electronics Company Limited
Contact: Mr. AnsionYao
Tel: 86-755-61329020
Adddate: 2010-03-20
MTB1306
MFG: ON Package Cooled: 05+ D/C: TO-263 Qty: 30000 Note: new in stock
Contact: Ms.winnie
Tel: 86-760-88228528
Adddate: 2010-03-20
MTB1306
MFG: MOTO Package Cooled: TO-263 Qty: 100 Note: http://www.silicon-ic.com
SILICON TECHNOLOGY(HONGKONG)ELECTRONIC LIMITED
Contact: Mr.chen
Tel: 86-755-83000558
Adddate: 2010-03-20
MTB1306
MFG: MOTOROLA Package Cooled: TO-263 Qty: 5000
ICWINDOWS ELECTRONICS HK CO.,LIMITED
Contact: Mr.Howard
Tel: 86-0755-83753525
Adddate: 2010-03-20
MTB1306
MFG: MOT Package Cooled: TO-263 D/C: 00+ Qty: 1600
Action Dynamic Tech(HK) Trading Co.
Contact: Ms.Ruby Chen
Tel: 86-755-82539044-837
Adddate: 2010-03-20
About MTB1306
PDF/DataSheet Download
Datasheet: MTB1306
File Size: 180792 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
MTB10N40E Supplier
MTB10N40E
MFG: ON D/C: 2006 Qty: 800
Contact: Mr.MIKEHU
Tel: 86-755-83205231
Adddate: 2010-03-20
MTB10N40E
MFG: ON Package Cooled: 05+ D/C: TO-263 Qty: 30000 Note: new in stock
Contact: Ms.winnie
Tel: 86-760-88228528
Adddate: 2010-03-20
MTB10N40E
MFG: N/A Package Cooled: N/A D/C: 08+09+ Qty: 8280 Note: STOCK
Contact: Ms.Cherry Feng
Tel: 86-755-8288-4368
Adddate: 2010-03-20
MTB10N40E
MFG: N/A Package Cooled: NA/ D/C: 09+ Qty: 5864
Contact: Mr.John Zhang
Tel: 86-755-8288-4268
Adddate: 2010-03-20
MTB10N40E
MFG: ON Package Cooled: to263 D/C: 09+/pb Qty: 30000
HONG KONG TERRY ELECTRONICS INTERNATIONAL COMPANY
Contact: Ms.Cherrin Ho
Tel: 86-755-23956340
Adddate: 2010-03-20
MTB10N40E
MFG: ON Qty: 46629
HuaKe Optoelectronics(ASIA) co.,Limited
Contact: Mr.Hu
Tel: +86-755-83553014
Adddate: 2010-03-20
MTB10N40E
MFG: Motorola Qty: 78817
HuaKe Optoelectronics(ASIA) co.,Limited
Contact: Mr.Hu
Tel: +86-755-83553014
Adddate: 2010-03-20
MTB10N40E
MFG: ON Package Cooled: 05+/06+ D/C: 24000 Qty: TO-263
Contact: Ms.Jennifer Li
Tel: 86-0755-83610826
Adddate: 2010-03-20
About MTB10N40E
PDF/DataSheet Download
Datasheet: MTB10N40E
File Size: 279709 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
MTB10N40E General Description
The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
MTB10N40E Maximum Ratings
| Rating |
Symbol |
Value |
Unit |
| Drain–to–Source Voltage |
VDSS |
400 |
Vdc |
| Drain–to–Gate Voltage (RGS = 1.0 MΩ) |
VDGR |
400 |
Vdc |
| Gate–to–Source Voltage — Continuous |
VGS |
± 20 |
Vdc |
| Drain Current — Continuous — Continuous @ 100℃ — Single Pulse (tp ≤ 10 μs) |
ID ID IDM |
10 6.0 40 |
Adc Apk |
| Total Power Dissipation Derate above 25℃ Total Power Dissipation @ TA = 25℃, when mounted with the minimum recommended pad size |
PD |
125 1.00 2.5 |
Watts W/℃ Watts |
| Operating and Storage Temperature Range |
TJ, Tstg |
– 55 to 150 |
℃ |
| Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25℃ (VDD = 25Vdc, VGS = 10 Vdc, Peak IL = 10Apk, L = 10 mH, RG = 25 Ω) |
EAS |
520 |
mJ |
| Thermal Resistance — Junction to Case — Junction to Ambient — Junction to Ambient, when mounted with the minimum recommended pad size |
RθJC RθJA RθJA |
1.00 62.5 50 |
℃/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8"from case for 10 seconds |
TL |
260 |
℃ |
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
MTB10N40E Features
• Robust High Voltage Termination
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Short Heatsink Tab Manufactured — Not Sheared
• Specially Designed Leadframe for Maximum Power Dissipation
• Available in 24 mm 13–inch/800 Unit Tape & Reel, Add T4 Suffix to Part Number
MTB1306 General Description
The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced high–cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
MTB1306 Maximum Ratings
| Rating |
Symbol |
Value |
Unit |
| Drain–to–Source Voltage |
VDSS |
30 |
Vdc |
| Drain–to–Gate Voltage (RGS = 1.0 MΩ) |
VDGR |
30 |
Vdc |
| Gate–to–Source Voltage — Continuous — Non–Repetitive (tp ≤ 10 ms) |
VGS VGSM |
± 20 ± 20 |
Vdc Vpk |
| Drain Current — Continuous — Continuous @ 100℃ — Single Pulse (tp ≤ 10 μs) |
ID ID IDM |
75 59 225 |
Adc Apk |
| Total Power Dissipation @ 25℃ Derate above 25℃ Total Power Dissipation @ TA = 25℃ (1) |
PD |
150 1.2 2.5 |
Watts W/℃ Watts |
| Operating and Storage Temperature Range |
TJ, Tstg |
– 55 to 150 |
℃ |
| Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25℃ (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 75 Apk, L = 0.1 mH, RG = 25 Ω) |
EAS |
280 |
mJ |
| Thermal Resistance — Junction to Case — Junction to Ambient — Junction to Ambient (1) |
RθJC RθJA RθJA |
0.8 62.5 50 |
℃/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8"from case for 10 seconds |
TL |
260 |
℃ |
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
E–FET and HDTMOS are trademarks of Motorola, Inc.
MTB1306 Features
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Short Heatsink Tab Manufactured — Not Sheared
• Specially Designed Leadframe for Maximum Power Dissipation
• Surface Mount Package Available in 16 mm, 13–inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number