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MTB1N100E, MTB2070FP, MTB20B20E

MTB1N100E, MTB2070FP, MTB20B20E Selling Leads, Datasheet

MFG:MOT  Package Cooled:05+  D/C:TO-263

MTB1N100E, MTB2070FP, MTB20B20E Picture

MTB1N100E, MTB2070FP, MTB20B20E Datasheet download

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Part Number: MTB1N100E

 

MFG: MOT

Package Cooled: 05+

D/C: TO-263

 

 

 
 
 
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MTB1N100E Suppliers

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  • MTB20N20E

  • Vendor: ON Pack: TO D/C: 03+& Qty: 900 Note: new &original?  Adddate: 2024-05-01
  • Inquire Now
  • chenglifa   China
    Contact: Ms.KE   MSN:chenglifa@hotmail.com
    Tel: 86-755-82564760
    Fax: 86-755-82564760
    (53)
  • MTB2P50E

  • D/C: 06+& Qty: 20000 Note: OEMAN  Adddate: 2024-05-01
  • Inquire Now
  • H.K.S.K Electronic Co.,Ltd   China
    Contact: Ms.browinezhong   MSN:browine_zhong@hotmail.com
    Tel: 86-0755-83243077
    Fax: 86-0755-83210427
    (0)

About MTB1N100E

PDF/DataSheet Download

Datasheet: MTB1N100E

File Size: 262627 KB

Manufacturer: MOTOROLA [Motorola, Inc]

Download : Click here to Download

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MTB2070FP Suppliers

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  • MTB20N20E

  • Vendor: ON Pack: TO D/C: 03+& Qty: 900 Note: new &original?  Adddate: 2024-05-01
  • Inquire Now
  • chenglifa   China
    Contact: Ms.KE   MSN:chenglifa@hotmail.com
    Tel: 86-755-82564760
    Fax: 86-755-82564760
    (53)
  • MTB2P50E

  • D/C: 06+& Qty: 20000 Note: OEMAN  Adddate: 2024-05-01
  • Inquire Now
  • H.K.S.K Electronic Co.,Ltd   China
    Contact: Ms.browinezhong   MSN:browine_zhong@hotmail.com
    Tel: 86-0755-83243077
    Fax: 86-0755-83210427
    (0)

About MTB001

PDF/DataSheet Download

Datasheet: MTB001

File Size: 363416 KB

Manufacturer: SHINDENGEN [Shindengen Electric Mfg.Co.Ltd]

Download : Click here to Download

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MTB20B20E Suppliers

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  • MTB20N20E

  • Vendor: ON Pack: TO D/C: 03+& Qty: 900 Note: new &original?  Adddate: 2024-05-01
  • Inquire Now
  • chenglifa   China
    Contact: Ms.KE   MSN:chenglifa@hotmail.com
    Tel: 86-755-82564760
    Fax: 86-755-82564760
    (53)
  • MTB2P50E

  • D/C: 06+& Qty: 20000 Note: OEMAN  Adddate: 2024-05-01
  • Inquire Now
  • H.K.S.K Electronic Co.,Ltd   China
    Contact: Ms.browinezhong   MSN:browine_zhong@hotmail.com
    Tel: 86-0755-83243077
    Fax: 86-0755-83210427
    (0)

About MTB001

PDF/DataSheet Download

Datasheet: MTB001

File Size: 363416 KB

Manufacturer: SHINDENGEN [Shindengen Electric Mfg.Co.Ltd]

Download : Click here to Download

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Related Part Number

MTB1N100E General Description

The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

MTB1N100E Maximum Ratings

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
1000
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
1000
Vdc
GatetoSource Voltage - Continuous
- NonRepetitive (tp 10 ms)
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain Current - Continuous
- Continuous @ 100
- Single Pulse (tp 10 s)
ID
ID
IDM
75
0.6
2.5
Adc
Apk
Total Power Dissipation
Derate above 25
Total Power Dissipation @ TA = 25, when mounted with the minimum recommended pad size
PD
90
0.6
3.0
Watts
W/
Watts
Operating and Storage Temperature Range
TJ, Tstg
55 to 150
Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25
(VDD = 25Vdc, VGS = 10 Vdc, Peak IL = 3.0Apk, L = 10 mH, RG = 25 )
EAS
45
mJ
Thermal Resistance - Junction to Case
- Junction to Ambient
- Junction to Ambient, when mounted with the minimum recommended pad size
RJC
RJA
RJA
1.67
62.5
50
/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from case for 10 seconds
TL
260

Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.

EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Thermal Clad is a trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

MTB1N100E Features

• Robust High Voltage Termination
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Short Heatsink Tab Manufactured - Not Sheared
• Specially Designed Leadframe for Maximum Power Dissipation
• Available in 24 mm 13inch/800 Unit Tape & Reel, Add T4 Suffix to Part Number

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