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NTGS3441T1, NTGS3441T1/PTY, NTGS3441T1G

Table of contents:
Info of NTGS3441T1
Info of NTGS3441T1/PTY
Info of NTGS3441T1G

NTGS3441T1, NTGS3441T1/PTY, NTGS3441T1G Selling Leads, Datasheet

MFG:ON Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:30000 D/C:0450+

NTGS3441T1, NTGS3441T1/PTY, NTGS3441T1G Datasheet download

Five Points

Part Number: NTGS3441T1G

Category: Discrete Semiconductor Products

MFG: ON Semiconductor (VA)

Package Cooled: 30000

D/C: 0450+

Description: MOSFET P-CH 20V 1.65A 6-TSOP

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NTGS3441T1 Parameters

Technical/Catalog Information	NTGS3441T1
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	1.65A
Rds On (Max) @ Id, Vgs	90 mOhm @ 3.3A, 4.5V
Input Capacitance (Ciss) @ Vds	480pF @ 5V
Power - Max	500mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	14nC @ 4.5V
Package / Case	6-TSOP
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	NTGS3441T1 NTGS3441T1 NTGS3441T1OS ND NTGS3441T1OSND NTGS3441T1OS

NTGS3441T1 Maximum Ratings

Rating	Symbol	Value	Unit
Drain−to−Source Voltage	V_DSS	−20	V
Gate−to−Source Voltage − Continuous	V_GS	±8.0	V
Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (Tp 10 S)	R_JA P_d I_D I_DM	244 0.5 −1.65 −10	°C/W W A A
Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (Tp 10 S)	R_JA P_d I_D I_DM	128 1.0 −2.35 −14	°C/W W A A
Thermal Resistance Junction−to−Ambient (Note 3) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (Tp 10 S)	R_JA P_d I_D I_DM	62.5 2.0 −3.3 −20	°C/W W A A
Operating and Storage Temperature Range	T_J, T_stg	−55 to 150	°C
Maximum Lead Temperature for Soldering Purposes for 10 Seconds	T_L	260	°C

1. Minimum FR−4 or G−10PCB, operating to steady state.
2. Mounted onto a 2, square FR−4 board (1, sq. 2 oz. cu. 0.06, thick single sided), operating to steady state.
3. Mounted onto a 2, square FR−4 board (1, sq. 2 oz. cu. 0.06, thick single sided), t 5.0 seconds.

NTGS3441T1 Features

• Ultra Low RDS(on)
• Higher Efficiency Extending Battery Life
• Miniature TSOP−6 Surface Mount Package
• Pb−Free Package is Available

NTGS3441T1 Typical Application

• Power Management in Portable and Battery−Powered Products, i.e.:
Cellular and Cordless Telephones, and PCMCIA Cards

NTGS3441T1 Connection Diagram

NTGS3441T1G Parameters

Technical/Catalog Information	NTGS3441T1G
Vendor	ON Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	1.65A
Rds On (Max) @ Id, Vgs	90 mOhm @ 3.3A, 4.5V
Input Capacitance (Ciss) @ Vds	480pF @ 5V
Power - Max	500mW
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	14nC @ 4.5V
Package / Case	6-TSOP
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NTGS3441T1G NTGS3441T1G NTGS3441T1GOSCT ND NTGS3441T1GOSCTND NTGS3441T1GOSCT

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