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NTP18N06L, NTP18N06LG, NTP22N06

NTP18N06L, NTP18N06LG, NTP22N06 Selling Leads, Datasheet

MFG:ON Semiconductor  Category:Discrete Semiconductor Products  Package Cooled:TO-  D/C:08+/09+

NTP18N06L Picture

NTP18N06L, NTP18N06LG, NTP22N06 Datasheet download

Five Points

Part Number: NTP18N06L

Category: Discrete Semiconductor Products

MFG: ON Semiconductor

Package Cooled: TO-

D/C: 08+/09+

Description: MOSFET N-CH 60V 22A TO220AB

 

 
 
 
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About NTP18N06L

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Datasheet: NTP18N06L

File Size: 94365 KB

Manufacturer: ONSEMI [ON Semiconductor]

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About NTP10N40

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Datasheet: NTP10N40

File Size: 45990 KB

Manufacturer: ON SEMICONDUCTOR

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  • NTP18N06G

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    Fax: 0086-755-61174144
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  • NTP18N06LG

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  • NTP27N06G

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About NTP22N06

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Datasheet: NTP22N06

File Size: 90543 KB

Manufacturer: ON SEMICONDUCTOR

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NTP18N06L Parameters

Technical/Catalog InformationNTP18N06L
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C15A
Rds On (Max) @ Id, Vgs100 mOhm @ 7.5A, 5V
Input Capacitance (Ciss) @ Vds 440pF @ 25V
Power - Max48.4W
PackagingTube
Gate Charge (Qg) @ Vgs20nC @ 5V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTP18N06L
NTP18N06L
NTP18N06LOS ND
NTP18N06LOSND
NTP18N06LOS

NTP18N06L General Description

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.

NTP18N06L Maximum Ratings

Rating Symbol Value Unit
Drain−to−Source Voltage VDSS 60 Vdc
Drain−to−Gate Voltage (RGS = 10 m) VDGR 60 Vdc
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tp 10 ms)
VGS ±10
±20
Vdc
Drain Current
− Continuous @ TC = 25°C
− Continuous @ TC = 100°C
− Single Pulse (tp 10 s)
ID
ID
IDM
15
8.0
45
Adc
Adc
Apk
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD 48.4
0.32
Watts
W/°C
Operating and Storage Temperature Range TJ, Tstg −55 to
+175
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc, VDS = 60 Vdc,
IL(pk) = 11 A, L = 1.0 mH, RG = 25 )
EAS 61 mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
RJC
RJA
3.1
72.5
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8, from case for 10 seconds
TL 260 °C

NTP18N06L Typical Application

• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits

NTP18N06LG Parameters

Technical/Catalog InformationNTP18N06LG
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C15A
Rds On (Max) @ Id, Vgs100 mOhm @ 7.5A, 5V
Input Capacitance (Ciss) @ Vds 440pF @ 25V
Power - Max48.4W
PackagingTube
Gate Charge (Qg) @ Vgs20nC @ 5V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTP18N06LG
NTP18N06LG
NTP18N06LGOS ND
NTP18N06LGOSND
NTP18N06LGOS

NTP22N06 Parameters

Technical/Catalog InformationNTP22N06
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C22A
Rds On (Max) @ Id, Vgs60 mOhm @ 11A, 10V
Input Capacitance (Ciss) @ Vds 700pF @ 25V
Power - Max60W
PackagingTube
Gate Charge (Qg) @ Vgs32nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTP22N06
NTP22N06
NTP22N06OS ND
NTP22N06OSND
NTP22N06OS

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