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NTP60N06, NTP60N06G, NTP60N06L

Table of contents:
Info of NTP60N06
Info of NTP60N06G
Info of NTP60N06L

NTP60N06, NTP60N06G, NTP60N06L Selling Leads, Datasheet

MFG:ON Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220 3 LEAD STANDARD D/C:08+/09+

NTP60N06, NTP60N06G, NTP60N06L Datasheet download

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Part Number: NTP60N06

Category: Discrete Semiconductor Products

MFG: ON Semiconductor

Package Cooled: TO-220 3 LEAD STANDARD

D/C: 08+/09+

Description: MOSFET N-CH 60V 60A TO220AB

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NTP60N06 Parameters

Technical/Catalog Information	NTP60N06
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	60A
Rds On (Max) @ Id, Vgs	14 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds	3220pF @ 25V
Power - Max	2.4W
Packaging	Tube
Gate Charge (Qg) @ Vgs	81nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	NTP60N06 NTP60N06 NTP60N06OS ND NTP60N06OSND NTP60N06OS

NTP60N06 General Description

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.

NTP60N06 Maximum Ratings

Rating	Symbol	Value	Unit
Drain−to−Source Voltage	V_DSS	60	Vdc
Drain−to−Gate Voltage (R_GS = 10 M)	V_DGR	60	Vdc
Gate−to−Source Voltage − Continuous − Non−Repetitive (t_p10 ms)	V_GS V_GS	±20 ±30	Vdc
Drain Current − Continuous @ T_A = 25 − Continuous @ T_A = 100 − Single Pulse (t_p10 µs)	I_D I_D I_DM	60 42.3 180	Adc Apk
Total Power Dissipation @ T_A = 25 Derate above 25 Total Power Dissipation @ T_A = 25(Note 1)	P_D	150 1.0 2.4	W W/ W
Operating and Storage Temperature Range	T_J, T_stg	−55 to +175
Single Pulse Drain−to−Source Avalanche Energy − Starting T_J = 25 (V_DD = 75 Vdc, V_GS = 10 Vdc, L = 0.3 mH I_L(pk) = 55 A, V_DS = 60 Vdc)	E_AS	454	mJ
Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1)	R_JC R_JA	1.0 62.5	/W
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds	T_L	260

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

1. When surface mounted to an FR4 board using minimum recommended pad size, (Cu Area 0.412 in²).

NTP60N06 Features

• Pb−Free Packages are Available

NTP60N06 Typical Application

• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits

NTP60N06G Parameters

Technical/Catalog Information	NTP60N06G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	60A
Rds On (Max) @ Id, Vgs	14 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds	3220pF @ 25V
Power - Max	2.4W
Packaging	Tube
Gate Charge (Qg) @ Vgs	81nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NTP60N06G NTP60N06G NTP60N06GOS ND NTP60N06GOSND NTP60N06GOS

NTP60N06L Parameters

Technical/Catalog Information	NTP60N06L
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	60A
Rds On (Max) @ Id, Vgs	16 mOhm @ 30A, 5V
Input Capacitance (Ciss) @ Vds	3075pF @ 25V
Power - Max	2.4W
Packaging	Tube
Gate Charge (Qg) @ Vgs	65nC @ 5V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	NTP60N06L NTP60N06L NTP60N06LOS ND NTP60N06LOSND NTP60N06LOS

NTP60N06L General Description

Designed for low voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits.

NTP60N06L Maximum Ratings

Rating	Symbol	Value	Unit
Drain−to−Source Voltage	V_DSS	60	Vdc
Drain−to−Gate Voltage (R_GS = 10 M )	V_DGR	60	Vdc
Gate−to−Source Voltage − Continuous − Non−Repetitive (t_p10 ms)	V_GS V_GS	±15 ±20	Vdc
Drain Current − Continuous @ T_A= 25°C − Continuous @ T_A 100°C − Single Pulse (t_p10 s)	I_D I _DI _DM	60 42.3 180	Adc Apk
Total Power Dissipation @ T_A = 25°C Derate above 25°C Total Power Dissipation @ T_A= 25°C (Note 1)	P_D	150 1.0 2.4	W W/°C W
Operating and Storage Temperature Range	T_J, T_stg	−55 to 175	°C
Single Pulse Drain−to−Source Avalanche Energy − Starting T_J= 25°C (V_DD= 75 Vdc, V_GS= 5.0 Vdc, L = 0.3 mH, I _L(pk) = 55 A,VDS = 60 Vdc)	E_AS	454	mJ
Thermal Resistance, − Junction−to−Case − Junction−to−Ambient (Note 1)	R_JC R_JA	1.0 62.5	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds	T_L	260	°C

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using the minimum recommended pad size, (Cu Area 0.412 in²).

NTP60N06L Features

• Pb−Free Packages are Available

NTP60N06L Typical Application

• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits

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