NTP75N03-06, NTP75N06 ON, NTP75N06D Selling Leads, Datasheet
MFG:ON Package Cooled:TO-
NTP75N03-06, NTP75N06 ON, NTP75N06D Datasheet download
Part Number: NTP75N03-06
MFG: ON
Package Cooled: TO-
D/C:
NTP75N03-06, NTP75N06 ON, NTP75N06D
- Table of contents:
Info of NTP75N03-06
Info of NTP75N06 ON
Info of NTP75N06D
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About NTP75N03-06
PDF/DataSheet Download
Datasheet: NTP75N03-06
File Size: 61645 KB
Manufacturer: ONSEMI [ON Semiconductor]
Download : Click here to Download
About NTP10N40
PDF/DataSheet Download
Datasheet: NTP10N40
File Size: 45990 KB
Manufacturer: ON SEMICONDUCTOR
Download : Click here to Download
About NTP75N06D
PDF/DataSheet Download
Datasheet: NTP75N06D
File Size: 81364 KB
Manufacturer: ONSEMI [ON Semiconductor]
Download : Click here to Download
NTP75N03-06 General Description
This 20 VGS gate drive vertical Power MOSFET is a general purpose part that provides the "best of design" available today in a low cost power package. This power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The Drain−to−Source Diode has a fast response with soft recovery.
NTP75N03-06 Maximum Ratings
| Rating |
Symbol |
Value |
Unit |
| Drain−to−Source Voltage |
VDSS |
30 |
Vdc |
| Drain−to−Gate Voltage (RGS = 10 M) |
VDGB |
30 |
Vdc |
| Gate−to−Source Voltage − Continuous |
VGS |
±20 |
Vdc |
| Non−repetitive (tp 10 ms) |
VGS |
±24 |
Vdc |
| Drain Current − Continuous @ TC = 25 − Continuous @ TC = 100 − Single Pulse (tp10 s) |
ID ID IDM |
75 59 225 |
Adc Apk |
| Total Power Dissipation @ TC = 25 Derate above 25 Total Power Dissipation @ TA = 25°C (Note 1) |
PD |
125 1.0 2.5 |
W W/ W |
| Operating and Storage Temperature Range |
TJ and Tstg |
−55 to +150 |
|
| Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25 (VDD = 38 Vdc, VGS = 10 Vdc, L = 1 mH IL(pk) = 55 A, VDS = 40 Vdc) |
EAS |
1500 |
mJ |
| Thermal Resistance − Junction−to−Case − Junction−to−Ambient − Junction−to−Ambient (Note 1) |
RJC RJA RJA |
1.0 62.5 50 |
/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds |
TL |
260 |
|
NTP75N03-06 Features
• Ultra−Low RDS(on), Single Base, Advanced Technology
• SPICE Parameters Available
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperatures
• High Avalanche Energy Capability
• ESD JEDAC Rated HBM Class 1, MM Class B, CDM Class 0
• SPICE Parameters Available
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperatures
• High Avalanche Energy Capability
• ESD JEDAC Rated HBM Class 1, MM Class B, CDM Class 0
NTP75N03-06 Typical Application
• Power Supplies
• Inductive Loads
• PWM Motor Controls
• Replaces MTP1306 and MTB1306
• Inductive Loads
• PWM Motor Controls
• Replaces MTP1306 and MTB1306
NTP75N03-06 Connection Diagram
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