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PM150CSD060, PM150CSD120, PM150CSE060

PM150CSD060, PM150CSD120, PM150CSE060 Selling Leads, Datasheet

MFG:MITSUBISHI  Package Cooled:IPM  D/C:N/A

PM150CSD060, PM150CSD120, PM150CSE060 Picture

PM150CSD060, PM150CSD120, PM150CSE060 Datasheet download

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Part Number: PM150CSD060

 

MFG: MITSUBISHI

Package Cooled: IPM

D/C: N/A

 

 

 
 
 
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  • PM1000-2AA3EXJFFP

  • Vendor: Qualcomm D/C: 02+& Qty: 765  Adddate: 2026-07-09
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  • ASK SEMICONDUCTOR LTD   China
    Contact: Mr.Subaninfo@asksemi.com   MSN:asksemiconductor@hotmail.com
    Tel: 86-0755-33060075/0755-29183325/0755-83221176
    Fax: 86-0755-33060076
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About PM150CSD060

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Datasheet: PM150CSD060

File Size: 85788 KB

Manufacturer: POWEREX [Powerex Power Semiconductors]

Download : Click here to Download

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PM150CSD120 Suppliers

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  • PM150CSD120

  • Vendor: MITSUBISHI D/C: 09+& Qty: 172 Note: Mail:salepj@hotmail.com  Adddate: 2026-07-09
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  • PUJIA TECH. DEVELOP. CO., LTD   China
    Contact: Mr.Lin   MSN:salepj@hotmail.com
    Tel: 86-755-83624945
    Fax: 86-755-83624801
    (357)
  • PM1000-2AA3EXJFFP

  • Vendor: Qualcomm D/C: 02+& Qty: 765  Adddate: 2026-07-09
  • Inquire Now
  • ASK SEMICONDUCTOR LTD   China
    Contact: Mr.Subaninfo@asksemi.com   MSN:asksemiconductor@hotmail.com
    Tel: 86-0755-33060075/0755-29183325/0755-83221176
    Fax: 86-0755-33060076
    (5)

About PM150CSD120

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Datasheet: PM150CSD120

File Size: 270811 KB

Manufacturer: POWEREX [Powerex Power Semiconductors]

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PM150CSE060 Suppliers

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  • PM150CSE060

  • Vendor: MITSUBISHI D/C: 03+&   Adddate: 2026-07-09
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  • TCLT Co.,LTD.   China
    Contact: Ms.BrandyHua  
    Tel: 86-755-29929313ext801
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    (0)
  • PM1000-2AA3EXJFFP

  • Vendor: Qualcomm D/C: 02+& Qty: 765  Adddate: 2026-07-09
  • Inquire Now
  • ASK SEMICONDUCTOR LTD   China
    Contact: Mr.Subaninfo@asksemi.com   MSN:asksemiconductor@hotmail.com
    Tel: 86-0755-33060075/0755-29183325/0755-83221176
    Fax: 86-0755-33060076
    (5)

About PM150CSE060

PDF/DataSheet Download

Datasheet: PM150CSE060

File Size: 138513 KB

Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

Download : Click here to Download

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PM150CSD060 General Description

Powerex Intellimod™ Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to 20kHz. Built-in control circuits provide optimum gate drive and protection for the IGBT and free-wheel diode power devices

PM150CSD060 Maximum Ratings

Characteristics Symbol PM150RSD120 Units
Power Device Junction Temperature Tj -20 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Case Operating Temperature* TC -20 to 100 °C
Mounting Torque, M5 Mounting Screws - 31 in-lb
Mounting Torque, M5 Mounting Screws - 31 in-lb
Mounting Torque, M5 Mounting Screws - 560 Grams
Supply Voltage Protected by OC and SC
(VD = 13.5 - 16.5V, Inverter Part) Tj = 125°C Start
VCC(prot.) 400 Volts
Isolation Voltage, AC 1 minute, 60Hz Sinusoidal VISO 2500 Volts
IGBT Inverter Sector
Collector-Emitter Voltage (VD = 15V, VCIN = 15V) VCES 600 Volts
Collector Current, ± (TC = 25°C) IC 150 Amperes
Peak Collector Current, ± (TC = 25°C) ICP 300 Amperes
Supply Voltage (Applied between P - N) VCC 400 Volts
Supply Voltage, Surge (Applied between P - N) VCC(surge) 500 Volts
Collector Dissipation (TC = 25°C) PC 416 Watts
Control Sector
Supply Voltage Applied between (VUP1-VUPC, VVP1-VVPC, VWP1-VWPC, VN1-VNC) VD 20 Volts
Input Voltage Applied between (UP-VUPC, VP-VVPC, WP-VWPC, UN, VN, WN, Br-VNC) VCIN 20 Volts
Fault Output Supply Voltage Applied between
(UFO-VUPC, VFO-VVPC, WFO-VWPC, FO-VNC)
VFO 20 Volts
Fault Output Current (UFO, VFO, WFO, FO) IFO 20 mA

PM150CSD060 Features

` Complete Output Power Circuit
` Gate Drive Circuit
` Protection Logic
Short Circuit
Over Current
Over Temperature
Under Voltage
` Low Loss Using 4th Generation IGBT Chip

PM150CSD060 Typical Application

· Inverters
· UPS
· Motion/Servo Control
· Power Supplies

PM150CSD120 General Description

Powerex Intellimod™ Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to 20kHz. Built-in control circuits provide optimum gate drive and protection for the IGBT and free-wheel diode power devices.

PM150CSD120 Maximum Ratings

Characteristics Symbol PM150RSD120 Units
Power Device Junction Temperature Tj -20 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Case Operating Temperature* TC -20 to 100 °C
Mounting Torque, M5 Mounting Screws - 31 in-lb
Mounting Torque, M5 Mounting Screws - 31 in-lb
Mounting Torque, M5 Mounting Screws - 820 Grams
Supply Voltage Protected by OC and SC
(VD = 13.5 - 16.5V, Inverter Part) Tj = 125°C Start
VCC(prot.) 800 Volts
Isolation Voltage, AC 1 minute, 60Hz Sinusoidal VISO 2500 Volts
IGBT Inverter Sector
Collector-Emitter Voltage (VD = 15V, VCIN = 15V) VCES 1200 Volts
Collector Current, ± (TC = 25°C) IC 150 Amperes
Peak Collector Current, ± (TC = 25°C) ICP 300 Amperes
Supply Voltage (Applied between P - N) VCC 800 Volts
Supply Voltage, Surge (Applied between P - N) VCC(surge) 1000 Volts
Collector Dissipation (TC = 25°C) PC 781 Watts
Control Sector
Supply Voltage Applied between (VUP1-VUPC, VVP1-VVPC, VWP1-VWPC, VN1-VNC) VD 20 Volts
Input Voltage Applied between (UP-VUPC, VP-VVPC, WP-VWPC, UN, VN, WN, Br-VNC) VCIN 20 Volts
Fault Output Supply Voltage Applied between
(UFO-VUPC, VFO-VVPC, WFO-VWPC, FO-VNC)
VFO 20 Volts
Fault Output Current (UFO, VFO, WFO, FO) IFO 20 mA

PM150CSD120 Features

` Complete Output Power Circuit
` Gate Drive Circuit
` Protection Logic
Short Circuit
Over Current
Over Temperature
Under Voltage
` Low Loss Using 4th Generation IGBT Chip

PM150CSD120 Typical Application

· Inverters
· UPS
· Motion/Servo Control
· Power Supplies

PM150CSE060 Maximum Ratings

Symbol
Parameter
Condition
Ratings
Unit
VCES
Collector-Emitter Voltage VD = 15V, V CIN = 15V
600
V
±IC
Collector Current TC=25
150
A
±ICP
Collector Current (Peak) TC=25
300
A
PC
Collector Dissipation TC=25
416
W
TJ
Junction Temperature
20 ~ +125*

PM150CSE060 Features

a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1m fine rule process. For example, typical VCE(sat)=1.7V

b) Using new Diode which is designed to get soft reverse recovery characteristics.

• 3 150A, 600V Current-sense IGBT for 15kHz switching
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage
• Acoustic noise-less 15/18.5kW class inverter application

PM150CSE060 Typical Application

General purpose inverter, servo drives and other motor controls

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