RFD15P06SM, RFD16N02L, RFD16N02LSM Selling Leads, Datasheet
MFG:INTERSIL Package Cooled:TO-252 D/C:TO
RFD15P06SM, RFD16N02L, RFD16N02LSM Datasheet download
Part Number: RFD15P06SM
MFG: INTERSIL
Package Cooled: TO-252
D/C: TO
RFD15P06SM, RFD16N02L, RFD16N02LSM
- Table of contents:
Info of RFD15P06SM
Info of RFD16N02L
Info of RFD16N02LSM
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About RFD15P06SM
PDF/DataSheet Download
Datasheet: RFD15P06SM
File Size: 89551 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About RFD16N02L
PDF/DataSheet Download
Datasheet: RFD16N02L
File Size: 76404 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About RFD16N02LSM
PDF/DataSheet Download
Datasheet: RFD16N02LSM
File Size: 76404 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
RFD15P06SM Maximum Ratings
| RFD15P06, RFD15P06SM, RFP15P06 | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | -60 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | -60 | V |
| Continuous Drain Current ID | 15 | A |
| Pulsed Drain Current (Note 3) IDM | Refer to UIS Curve | A |
| Gate to Source Voltage VGS | ±10 | V |
Power Dissipation PD 25oC |
80 | W |
| Pulsed Avalanche Rating EAS | Figures 6, 16, 17 | |
| Derate above 25oC | 0.533 | A |
| Pulsed Avalanche Rating UIS | Refer to UIS SOA | |
| Operating and Storage Temperature .TJ, TSTG | -55 to 75 | o C |
| Maximum Temperature for Soldering | ||
| Soldering Temperature of Leads for 10s TL | 300 | o C |
| Package Body for 10s, See Techbrief 334 Tpkg | 260 | o C |
RFD15P06SM Features
• 15A, 60V
• rDS(ON) = 0.150W
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
• rDS(ON) = 0.150W
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
RFD16N02L General Description
The RFD16N02L and RFD16N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This
process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V to 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits.
RFD16N02L Maximum Ratings
| RFD16N02L, RFD16N02LSM | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | 20 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 20 | V |
| Continuous Drain Current ID | 16 | A |
| Pulsed Drain Current (Note 3) IDM | Refer to UIS Curve | A |
| Gate to Source Voltage VGS | ±10 | V |
| EAS Power Dissipation PD 25oC |
48 | W |
| Pulsed Avalanche Rating EAS | Figures 6, 16, 17 | |
| Derate above 25oC | 0.606 | A |
| Pulsed Avalanche Rating UIS | Refer to UIS SOA | |
| Operating and Storage Temperature .TJ, TSTG | -55 to 75 | o C |
| Maximum Temperature for Soldering | ||
| Soldering Temperature of Leads for 10s TL | 300 | o C |
RFD16N02L Features
• 16A, 20V
• rDS(ON) = 0.022W
• Temperature Compensating PSPICE Model
• Can be Driven Directly from CMOS, NMOS,and TTL Circuits
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• rDS(ON) = 0.022W
• Temperature Compensating PSPICE Model
• Can be Driven Directly from CMOS, NMOS,and TTL Circuits
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
RFD16N02LSM General Description
The RFD16N02L and RFD16N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This
process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V to 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits.
RFD16N02LSM Maximum Ratings
| RFD16N02L, RFD16N02LSM | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | 20 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 20 | V |
| Continuous Drain Current ID | 16 | A |
| Pulsed Drain Current (Note 3) IDM | Refer to UIS Curve | A |
| Gate to Source Voltage VGS | ±10 | V |
| EAS Power Dissipation PD 25oC |
48 | W |
| Pulsed Avalanche Rating EAS | Figures 6, 16, 17 | |
| Derate above 25oC | 0.606 | A |
| Pulsed Avalanche Rating UIS | Refer to UIS SOA | |
| Operating and Storage Temperature .TJ, TSTG | -55 to 75 | o C |
| Maximum Temperature for Soldering | ||
| Soldering Temperature of Leads for 10s TL | 300 | o C |
RFD16N02LSM Features
• 16A, 20V
• rDS(ON) = 0.022W
• Temperature Compensating PSPICE Model
• Can be Driven Directly from CMOS, NMOS,and TTL Circuits
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• rDS(ON) = 0.022W
• Temperature Compensating PSPICE Model
• Can be Driven Directly from CMOS, NMOS,and TTL Circuits
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
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