SFP2955, SFP30N06, SFP3340F-3R5M-R Selling Leads, Datasheet
MFG:FAIRCHILD Package Cooled:9800 D/C:07+
SFP2955, SFP30N06, SFP3340F-3R5M-R Datasheet download
Part Number: SFP2955
MFG: FAIRCHILD
Package Cooled: 9800
D/C: 07+
MFG:FAIRCHILD Package Cooled:9800 D/C:07+
SFP2955, SFP30N06, SFP3340F-3R5M-R Datasheet download
MFG: FAIRCHILD
Package Cooled: 9800
D/C: 07+
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PDF/DataSheet Download
Datasheet: SFP2955
File Size: 256591 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
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PDF/DataSheet Download
Datasheet: SFP30N06
File Size: 981571 KB
Manufacturer:
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PDF/DataSheet Download
Datasheet: SFP161
File Size: 171707 KB
Manufacturer: Daesan Electronics Corp.
Download : Click here to Download
Symbol |
Characteristic |
Value |
Units |
VDSS |
Drain-to-Source Voltage |
-60 |
V |
ID |
Continuous Drain Current (TC=25) |
-9.4 |
A |
Continuous Drain Current (TC=100) |
-6.6 | ||
IDM |
Drain Current-Pulsed |
-38 |
A |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAS |
Single Pulsed Avalanche Energy |
151 |
mJ |
IAR |
Avalanche Current |
-9.4 |
A |
EAR |
Repetitive Avalanche Energy |
4.9 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
-5.5 |
V/ns |
PD |
Total Power Dissipation (TC=25) Linear Derating Factor |
49 0.33 |
W W/°C |
TJ,TSTG |
Operating Junction and Storage Temperature Range |
- 55 to +175 |
°C |
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds |
300 |
This Power MOSFET is produced using SemiWell's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. This Power MOSFET is well suited for synchronous DC-DC Converters and Power Management in portable and battery operated products.
Rating | Symbol | Value | Unit |
Drain to Source Voltage | VDSS | 60 | V |
Continuous Drain Current(@TC = 25°C) | ID |
30 |
A |
Continuous Drain Current(@TC = 100°C) | ID | 21.2 | A |
Drain Current Pulsed (Note 1) | IDM | 120 | A |
Gate to Source Voltage | VGS | ±20 | V |
Single Pulsed Avalanche Energy (Note 2) | EAS | 430 | mJ |
Total Power Dissipation(@TC = 25 °C) | PD | 79 | W |
Derating Factor above 25 °C | PD | 0.53 | W/°C |
Peak Diode Recovery dv/dt (Note 3) | dv/dt | 7.0 | V/ns |
Operating Junction Temperature & Storage Temperature | TJ, TSTG | -55 to 175 | |
Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. |
TL | 300 |