SFP70N06, SFP740, SFP7N60 Selling Leads, Datasheet
Package Cooled:TO220 D/C:07+
SFP70N06, SFP740, SFP7N60 Datasheet download
Part Number: SFP70N06
MFG: --
Package Cooled: TO220
D/C: 07+
SFP70N06, SFP740, SFP7N60
- Table of contents:
Info of SFP70N06
Info of SFP740
Info of SFP7N60
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About SFP70N06
PDF/DataSheet Download
Datasheet: SFP70N06
File Size: 940997 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About SFP161
PDF/DataSheet Download
Datasheet: SFP161
File Size: 171707 KB
Manufacturer: Daesan Electronics Corp.
Download : Click here to Download
About SFP7N60
PDF/DataSheet Download
Datasheet: SFP7N60
File Size: 764619 KB
Manufacturer: SEMIWELL [SemiWell Semiconductor]
Download : Click here to Download
SFP70N06 General Description
This Power MOSFET is produced using Wisdom's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. This Power MOSFET is well suited for synchronous DC-DC Converters and Power Management in portable and battery operated products.
SFP70N06 Maximum Ratings
|
Symbol |
Parameter |
Value |
Units |
|
VDSS |
Drain to Source Voltage |
60 |
V |
|
ID |
Continuous Drain Current (TC=25) |
70 |
A |
| Continuous Drain Current (TC=100) |
51 |
A | |
|
IDM |
Drain Current Pulsed(Note 1) |
280 |
A |
|
VGS |
Gate to Source Voltage |
±25 |
V |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
800 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
7.0 |
V/ns |
|
PD |
Total Power Dissipation (@ TC=25) |
158 |
W |
| Derating Factor above 25 °C |
1.05 |
W/°C | |
|
TSTG,TJ |
Operating Junction Temperature & Storage Temperature |
- 55 ~ 175 |
°C |
|
TL |
Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. |
300 |
°C |
SFP70N06 Features
` Low RDS(on) (0.015 )@VGS=10V
` Low Gate Charge (Typical 65nC)
` Low Crss (Typical 150pF)
` Improved dv/dt Capability
` 100% Avalanche Tested
` Maximum Junction Temperature Range (175°C)
` Low Gate Charge (Typical 65nC)
` Low Crss (Typical 150pF)
` Improved dv/dt Capability
` 100% Avalanche Tested
` Maximum Junction Temperature Range (175°C)
SFP7N60 General Description
This Power MOSFET is produced using Semiwell's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
SFP7N60 Maximum Ratings
|
Symbol |
Parameter |
Value |
Units |
|
VDSS |
Drain to Source Voltage |
600 |
V |
|
ID |
Continuous Drain Current(@TC = 25°C) |
7.0 |
A |
|
Continuous Drain Current(@TC = 100°C) |
4.4 |
A | |
|
IDM |
Drain Current Pulsed (Note 1) |
28 |
A |
|
VGS |
Gate to Source Voltage |
±30 |
V |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
420 |
mJ |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
14.7 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
|
PD |
Total Power Dissipation(@TC = 25 °C) |
147 |
W |
| Derating Factor above 25 °C |
1.18 |
W/ | |
|
TSTG,TJ |
Operating Junction Temperature & Storage Temperature |
-55~150 |
|
|
TL |
Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. |
300 |
SFP7N60 Features
R DS(on) (Max 1.2 )@VGS=10V
Gate Charge (Typical 28nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
Gate Charge (Typical 28nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
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